{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD26NF10","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD26NF10","canonicalUrl":"https://icboms.com/stmicroelectronics/STD26NF10","factsUrl":"https://icboms.com/api/mcp/products/STD26NF10","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ II N-Channel MOSFET, STD26NF10, 100V Vdss, 25A Id, 38mOhm Rds(on), DPAK (TO-252) surface mount package.","salesMarkdown":"## 100V, 25A N-channel in DPAK — the switching workhorse The STD26NF10 is an N-channel MOSFET from STMicroelectronics' STripFET™ II series, rated for 100 V drain-to-source breakdown and 25 A continuous drain current at 25°C case temperature. This puts it in the sweet spot for 48–72 V bus converters, battery management in power tools or e-bikes, and secondary-side synchronous rectification in AC-DC supplies up to about 200 W. The 38 mOhm maximum on-resistance at 12.5 A and 10 V gate drive means conduction losses stay under 6 W at full rated current — manageable with the DPAK's exposed pad soldered to a reasonable copper area on the PCB. ## Gate drive and switching profile Total gate charge is 55 nC at 10 Vgs — a figure that tells the gate driver designer the energy per switching cycle. At 100 kHz switching frequency the average gate drive current is 5.5 mA, well within the capability of a standard half-bridge driver like the L6384 or IR2104. The 1550 pF input capacitance at 25 Vds confirms the driver sees a moderate capacitive load. Gate threshold voltage is 4 V maximum at 250 µA drain current, so the device is fully enhanced with a 10 V gate drive. The ±20 V maximum gate-source rating provides margin against ringing on the gate node in hard-switching topologies. ## Thermal and environmental envelope Operating junction temperature range spans -55°C to 175°C, covering industrial and automotive under-hood environments without derating at the hot end. Maximum power dissipation is 100 W at case temperature — the practical limit is set by the PCB's ability to sink heat from the DPAK tab. ## Package and mounting Supplied in the DPAK (TO-252) surface-mount package — the same footprint as the industry-standard DPAK with a solderable tab on the bottom. The supplier device package is DPAK, and the package/case is TO-252-3, DPak (2 Leads + Tab), SC-63. The tab is the drain connection; the PCB layout must connect it to the drain node and provide a thermal via array under the tab for heat spreading. Available in Tape & Reel or Cut Tape options for both volume reflow and prototype builds.","metaTitle":"STD26NF10 N-Channel MOSFET, 100V 25A DPAK","metaDescription":"STD26NF10 N-channel MOSFET from STMicroelectronics STripFET™ II series. 100V Vdss, 25A continuous drain, 38mOhm Rds(on) at 10V.","metaKeywords":null},"attributes":{"series":"STripFET™ II","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ II","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD26","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"38mOhm @ 12.5A, 10V","Power Dissipation (Max)":"100W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"55 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"1550 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"25A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.8000","priceTiers":[{"qty":1,"price":"$1.80000","currency":"USD"},{"qty":10,"price":"$1.49800","currency":"USD"},{"qty":100,"price":"$1.19250","currency":"USD"},{"qty":500,"price":"$1.00906","currency":"USD"},{"qty":1000,"price":"$0.85618","currency":"USD"},{"qty":2500,"price":"$0.81337","currency":"USD"},{"qty":5000,"price":"$0.78279","currency":"USD"},{"qty":12500,"price":"$0.75688","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/70897e7439f89fcd0a3247dd3d76bcdf.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD26NF10/alternatives.json"},"ai":{"faq":[{"question":"What is the closest functional alternative to STD26NF10 — does STB30NF10T4 drop in?","answer":"The STB30NF10T4 is a close functional peer from the same STripFET™ II family, also rated at 100 V and ±20 Vgs, with a similar gate charge of 55 nC. The key difference is package: the STB30NF10T4 comes in D²PAK (TO-263), a larger surface-mount package with a wider tab for better heat spreading. It will not drop into a DPAK footprint without a PCB layout change. The STD26NF10's DPAK is the smaller, lower-profile option for space-constrained designs."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD26NF10","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD26NF10 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}