{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD25NF10LA","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD25NF10LA","canonicalUrl":"https://icboms.com/stmicroelectronics/STD25NF10LA","factsUrl":"https://icboms.com/api/mcp/products/STD25NF10LA","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ II N-Channel MOSFET, STD25NF10LA, 100V Vdss, 25A Id, 35mOhm Rds(on) at 10V, DPAK surface-mount, -55°C to 175°C.","salesMarkdown":"## On-resistance and gate drive — what the 35 mOhm and 4.5 V / 10 V drive mean The STD25NF10LA: At 10 V gate drive with 12.5 A drain current the Rds(on) is 35 mOhm maximum. The drive voltage is specified at both 4.5 V and 10 V. The 175°C maximum junction allows headroom in a high-ambient enclosure or when the part is dissipating close to its 100 W case-temperature power limit. ## DPAK package — footprint and thermal path The part comes in the TO-252-3 / DPAK surface-mount package with two leads and a tab. The DPAK footprint is standard, so the STD25NF10LA can drop into a board already laid out for a DPAK N-channel MOSFET without a layout change.","metaTitle":"STD25NF10LA N-Channel MOSFET, 100V 25A DPAK","metaDescription":"STD25NF10LA N-Channel MOSFET from STMicroelectronics STripFET™ II series. 35mOhm Rds(on) at 10V, 100V drain-source, 25A continuous drain. DPAK surface-mount.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™ II","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Base Product Number":"STD25","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"35mOhm @ 12.5A, 10V","Power Dissipation (Max)":"100W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"52 nC @ 5 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"1710 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"25A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.1600","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/0bec0ee31d242ff74e96b11ddb66b16e.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD25NF10LA/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD25NF10LA at 10V gate drive?","answer":"The Rds(on) is 35 mOhm maximum at 10 V gate drive with 12.5 A drain current. That is the guaranteed upper limit for conduction-loss calculations in a hard-switching design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD25NF10LA","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD25NF10LA when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}