{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD1HN60K3","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD1HN60K3","canonicalUrl":"https://icboms.com/stmicroelectronics/STD1HN60K3","factsUrl":"https://icboms.com/api/mcp/products/STD1HN60K3","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD1HN60K3, SuperMESH3 series, N-Channel MOSFET, 600 V Vdss, 1.2 A Id, 8 Ohm Rds(on) at 10 V, 9.5 nC Qg, DPAK (TO-252) package, -55 to 150 °C.","salesMarkdown":"## Switching performance and drive requirements The STD1HN60K3: Gate charge is 9.5 nC at 10 V. Input capacitance is 140 pF at 50 V. Gate threshold voltage is 4.5 V maximum at 50 µA. Drive voltage for rated Rds(on) is 10 V. ## Package and thermal handling — DPAK rework considerations From a rework standpoint, the DPAK is straightforward: the tab is large enough that a hot-air station with a 10 mm nozzle can reflow the solder without overheating the plastic body. The gate and source pins are on a 2.54 mm pitch, easy to inspect and touch up. No fine-pitch alignment needed — the tab self-centers during reflow if the paste deposit is even. ROHS3 compliant.","metaTitle":"STD1HN60K3 N-Channel 600 V 1.2 A MOSFET, 8 Ohm Rds(on) DPAK","metaDescription":"STD1HN60K3 N-Channel 600 V 1.2 A MOSFET from STMicroelectronics SuperMESH3 series. 8 Ohm Rds(on) at 10 V, 9.5 nC gate charge, DPAK package.","metaKeywords":null},"attributes":{"series":"SuperMESH3™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"SuperMESH3™","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 50µA","Base Product Number":"STD1HN60","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"8Ohm @ 600mA, 10V","Power Dissipation (Max)":"27W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"9.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"140 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"1.2A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5300","priceTiers":[{"qty":1,"price":"$0.98000","currency":"USD"},{"qty":2500,"price":"$0.80255","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/3c302ff72271852f76bfeaada21bae86.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD1HN60K3/alternatives.json"},"ai":{"faq":[{"question":"Is STD1HN60K3 active or obsolete?","answer":"Active. ROHS3 compliant."},{"question":"What is the Rds(on) of STD1HN60K3?","answer":"Maximum on-resistance is 8 Ohm at 600 mA drain current and 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD1HN60K3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD1HN60K3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}