{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD18N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD18N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STD18N65M5","factsUrl":"https://icboms.com/api/mcp/products/STD18N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh V N-channel MOSFET, STD18N65M5, 650 V Vdss, 15 A Id, 220 mOhm Rds(on) at 10 V, 31 nC Qg, DPAK surface-mount package.","salesMarkdown":"## 650 V MDmesh V N-channel in DPAK ## Switching and conduction loss budget Gate charge totals 31 nC at 10 V, a moderate figure for a 650 V device that keeps the gate-driver power stage small. Input capacitance is 1240 pF at 100 V drain-source, which sets the switching speed ceiling in hard-switched topologies like flyback or PFC. Maximum power dissipation is 110 W at the case, with the junction rated to 150 °C. The DPAK package copper footprint on the PCB directly sets the thermal resistance — a 1-inch-square pad on a 2-oz copper board is typical for this class.","metaTitle":"STD18N65M5 MOSFET N-Ch 650V 15A DPAK, MDmesh V","metaDescription":"STD18N65M5 N-channel 650 V 15 A MOSFET in DPAK, 220 mOhm Rds(on) at 10 V, 31 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ V","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STD18","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"220mOhm @ 7.5A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"31 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1240 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"15A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.9600","priceTiers":[{"qty":1,"price":"$2.96000","currency":"USD"},{"qty":10,"price":"$2.48200","currency":"USD"},{"qty":100,"price":"$2.00760","currency":"USD"},{"qty":500,"price":"$1.78454","currency":"USD"},{"qty":1000,"price":"$1.52802","currency":"USD"},{"qty":2500,"price":"$1.43879","currency":"USD"},{"qty":5000,"price":"$1.38038","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/6c866d072415557ec020e6285ed44d25.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD18N65M5/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD18N65M5?","answer":"The maximum Rds(on) is 220 mOhm at 7.5 A drain current with 10 V gate drive. This is the value used for conduction-loss calculations in the power stage."},{"question":"What package does STD18N65M5 come in?","answer":"The DPAK footprint is standard for medium-power offline converters."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD18N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD18N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}