{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD170N4F7AG","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD170N4F7AG","canonicalUrl":"https://icboms.com/stmicroelectronics/STD170N4F7AG","factsUrl":"https://icboms.com/api/mcp/products/STD170N4F7AG","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD170N4F7AG, N-Channel STripFET MOSFET, 40V Vdss, 80A Id, 2.8mOhm Rds(on) @ 10V, AEC-Q101 qualified, DPAK package, -55°C to 175°C junction temperature.","salesMarkdown":"## Obsolete — what this means for the BOM line The STD170N4F7AG is marked obsolete by STMicroelectronics. For a production BOM that already specifies this part, the procurement path is the surplus and independent-distribution channel. ## Automotive-grade parametrics ## Switching and drive considerations Gate charge is 63 nC at 10V, with an input capacitance of 4350 pF at 25V Vds. The 10V drive voltage is specified for minimum Rds(on); at lower gate voltages the on-resistance climbs significantly, so a gate driver rail of at least 10V is assumed in the original design. The ±20V maximum gate-source rating provides margin for ringing on long gate traces, but a gate resistor is still advisable to damp the 4350 pF input capacitance.","metaTitle":"STD170N4F7AG N-Channel MOSFET, 40V, 80A, AEC-Q101, DPAK","metaDescription":"STD170N4F7AG N-channel STripFET MOSFET, 40V Vdss, 80A Id, 2.8mOhm Rds(on). AEC-Q101 qualified.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Grade":"Automotive","Series":"STripFET™","Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD17","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"2.8mOhm @ 40A, 10V","Power Dissipation (Max)":"172W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"63 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"4350 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.7900","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/ac9b6b265da13b385a398904102c27e6.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD170N4F7AG/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STD170N4F7AG?","answer":"No official successor is recorded. A pin-compatible alternative from the same STripFET family would need to match the 40V Vdss, 80A Id, 2.8 mOhm Rds(on) at 10V, and AEC-Q101 qualification. Qualification testing is required before substituting into an existing design."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD170N4F7AG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD170N4F7AG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}