{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD16N65M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD16N65M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STD16N65M2","factsUrl":"https://icboms.com/api/mcp/products/STD16N65M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD16N65M2 N-channel MOSFET, MDmesh M2 series, 650V Vdss, 11A Id, 360mOhm Rds(on), DPAK (TO-252) surface-mount package.","salesMarkdown":"## 650V N-channel in DPAK — MDmesh M2 generation The STD16N65M2 is an N-channel power MOSFET from STMicroelectronics, built on the MDmesh M2 planar technology. ## Switching charge and input capacitance Gate charge (Qg) is 19.5 nC at Vgs = 10 V, and input capacitance (Ciss) is 718 pF at Vds = 100 V. The low Qg relative to the 650 V class means the gate driver sees a light reactive load — a standard 1 A gate-driver IC can switch this FET at 100 kHz without excessive cross-conduction losses. The DPAK (TO-252-3) surface-mount package with a single tab carries the 110 W power dissipation at case temperature. The thermal path runs through the tab — the PCB copper area on the drain pad sets the real-world junction-to-ambient resistance, not the package alone. ## Temperature range and drive threshold The maximum gate threshold voltage (Vgs(th)) is 4 V at 250 µA drain current — a logic-level 5 V gate signal barely turns it on; 10 V gate drive is the practical minimum for full enhancement. Maximum gate-source voltage is ±25 V, giving tolerance to ringing on the gate node in hard-switching layouts without external clamping. ## Active production — sourcing and compliance RoHS compliance is standard for the MDmesh M2 family; specific REACH and UL documentation is available from STMicroelectronics on request.","metaTitle":"STD16N65M2 N-Channel MOSFET, 650V, 11A, MDmesh M2","metaDescription":"STD16N65M2 N-channel 650V MOSFET, 11A, 360mOhm Rds(on), MDmesh M2 series, DPAK. Active production. Quoted to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD16","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"360mOhm @ 5.5A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"19.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"718 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.3900","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/15a3d2e9d612c8d53ebb522ae7668120.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD16N65M2/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to the STD16N65M2?","answer":"The MDmesh M2 family shares the same DPAK footprint, but a direct parametric match requires reviewing the specific Rds(on) and Qg targets against the BOM."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD16N65M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD16N65M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}