{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD16N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD16N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STD16N60M2","factsUrl":"https://icboms.com/api/mcp/products/STD16N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD16N60M2, MDmesh™ M2 series, N-Channel MOSFET, 600V Vdss, 12A Id, 320mOhm Rds(on) at 10V, DPAK (TO-252) package, 110W power dissipation, 19nC gate charge.","salesMarkdown":"## 600 V N-channel MOSFET in DPAK — MDmesh M2 series The STD16N60M2 is a 600 V N-channel power MOSFET from STMicroelectronics' MDmesh M2 series, built with a strip-layout vertical DMOS process that delivers low on-resistance and reduced gate charge for high-frequency switching applications. The 19 nC gate charge is notably low for its current rating, which reduces the crossover conduction loss during hard-switching transitions. This combination makes the part well suited for resonant and quasi-resonant topologies where both conduction and switching losses matter. Compared to older planar-generation 600 V parts in the same package, the MDmesh M2 structure delivers roughly half the gate charge for a similar Rds(on) figure, which translates directly into higher efficiency at frequencies above 70 kHz. ## Package and thermal design — DPAK layout notes The DPAK (TO-252) footprint is a standard surface-mount power package with the drain tab as the main heat path. The 110 W power dissipation rating assumes the tab is soldered to a sufficient copper area on the PCB — typically at least 1 in² of 2-oz copper on the top layer, with thermal vias to inner planes. The exposed tab carries drain potential, so the copper island must be electrically isolated or tied to the drain node.","metaTitle":"STD16N60M2 N-Channel MOSFET, 600V, 12A, DPAK","metaDescription":"STD16N60M2 from STMicroelectronics – 600V N-channel MOSFET, 12A continuous drain, 320mOhm Rds(on), 19nC gate charge. MDmesh M2 series. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD16","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"320mOhm @ 6A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"19 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"700 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"12A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.0200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/503a0d913b14412d8418f74c92a6abf3.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD16N60M2/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD16N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD16N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}