{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD15N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD15N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STD15N65M5","factsUrl":"https://icboms.com/api/mcp/products/STD15N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD15N65M5, N-Channel MDmesh™ V MOSFET, 650 V Vdss, 11 A continuous drain, 340 mOhm Rds(on) at 10 V, DPAK surface-mount package.","salesMarkdown":"## 650 V N-channel — the design margin for 600 V rails That 650 V rating puts 50 V of margin above a 600 V bus — enough headroom to absorb switching transients without avalanche stress in a typical PFC or flyback stage. ## On-resistance and gate drive — the efficiency pair That is the conduction-loss floor for the BOM — at 5.5 A the dissipation is about 10.3 W, which the DPAK package's exposed tab must sink to the board copper. Gate charge totals 22 nC at 10 V, so a standard 1 A gate driver can switch this FET at 100 kHz with about 2.2 W of drive loss — well within a typical driver's SOA. ## DPAK — thermal path is the layout constraint The DPAK (TO-252) surface-mount package has a single exposed drain tab. The datasheet's 85 W power dissipation assumes the tab is soldered to a minimum copper area on the PCB — a 2-layer board with a 1 oz pour under the tab will not hit that ceiling. For continuous operation above 30 W, a 4-layer board with thermal vias under the tab is the practical choice.","metaTitle":"STD15N65M5 N-Channel MOSFET, 650 V, 11 A, DPAK","metaDescription":"STD15N65M5 N-channel 650 V 11 A MOSFET in DPAK. MDmesh V technology, 340 mOhm Rds(on) at 10 V. Active lifecycle, ROHS3. Sourced per RFQ.","metaKeywords":null},"attributes":{"series":"MDmesh™ V","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ V","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STD15","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"340mOhm @ 5.5A, 10V","Power Dissipation (Max)":"85W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"22 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"816 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.8600","priceTiers":[{"qty":1,"price":"$4.86000","currency":"USD"},{"qty":10,"price":"$4.07900","currency":"USD"},{"qty":100,"price":"$3.29970","currency":"USD"},{"qty":500,"price":"$2.93304","currency":"USD"},{"qty":1000,"price":"$2.51142","currency":"USD"},{"qty":2500,"price":"$2.36476","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e920e69f89192c600338afb5e3419ab6.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD15N65M5/alternatives.json"},"ai":{"faq":[{"question":"Can STD15N65M5 be used for 600 V applications?","answer":"Yes. The 650 V Vdss rating provides 50 V of margin above a 600 V DC bus, which is sufficient to absorb typical switching overshoot in PFC, flyback, and LLC converter stages."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD15N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD15N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}