{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD15N60M2-EP","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD15N60M2-EP","canonicalUrl":"https://icboms.com/stmicroelectronics/STD15N60M2-EP","factsUrl":"https://icboms.com/api/mcp/products/STD15N60M2-EP","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD15N60M2-EP, N-Channel MOSFET, MDmesh™ M2-EP series, 600 V Vdss, 11 A continuous drain, 378 mOhm Rds(on) at 10 V, 17 nC gate charge, DPAK (TO-252) surface-mount package, -55°C to 150°C junction temperature.","salesMarkdown":"For a given load current, this resistance directly sets the I²R dissipation — at 5.5 A the loss is about 11.4 W, which the 110 W maximum power dissipation at the case can handle with adequate heatsinking. Gate charge is 17 nC at 10 V, a low figure for a 600 V device of this current rating. Together with the low gate charge, this part is suited for hard-switched topologies where fast transitions reduce turn-on and turn-off losses. ## Package and mounting — DPAK for surface-mount assembly The STD15N60M2-EP comes in the DPAK (TO-252) surface-mount package, with two leads and a tab that serves as the drain connection.","metaTitle":"STD15N60M2-EP MOSFET, N-Channel 600V, 378mOhm Rds(on), DPAK","metaDescription":"STD15N60M2-EP N-channel MOSFET, 600V Vdss, 11A Id, 378mOhm Rds(on) at 10V. MDmesh M2-EP series in DPAK. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2-EP","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD15","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"378mOhm @ 5.5A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"17 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"590 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.7445","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/1ed6420a6c7e5ebf55346333f3d5a6c0.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD15N60M2-EP/alternatives.json"},"ai":{"faq":[{"question":"What is the exact Rds(on) specification for STD15N60M2-EP?","answer":"The maximum Rds(on) is 378 mOhm at a gate-to-source voltage of 10 V and a drain current of 5.5 A. This is the on-resistance value used for conduction loss calculations in the design."},{"question":"Is STD15N60M2-EP a direct replacement for STD15N60M2?","answer":"The STD15N60M2-EP is a variant within the same MDmesh M2-EP series. The base product number is STD15, and the suffix indicates the EP (enhanced performance) version. Pin compatibility and parametric differences should be verified against the respective datasheets, but the DPAK footprint is shared across the family."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD15N60M2-EP","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD15N60M2-EP when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}