{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD15N60DM6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD15N60DM6","canonicalUrl":"https://icboms.com/stmicroelectronics/STD15N60DM6","factsUrl":"https://icboms.com/api/mcp/products/STD15N60DM6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ series, N-Channel MOSFET, 600 V Drain-Source Voltage, 12 A Continuous Drain Current, 338 mΩ Rds(on) at 6 A, 10 V, 15.3 nC Gate Charge, TO-252-3 (DPak) package, -55°C to 150°C operating temperature.","salesMarkdown":"The STD15N60DM6 is an N-Channel 600 V MOSFET in a TO-252 (DPak) surface-mount package. Gate charge is 15.3 nC at 10 V; input capacitance is 607 pF at 100 V drain-source. Operating temperature range is -55°C to 150°C; power dissipation is 110 W. For current designs this means no forced requalification risk.","metaTitle":"STD15N60DM6 N-Channel 600 V MOSFET, 338 mΩ Rds(on), TO-252","metaDescription":"STD15N60DM6 from STMicroelectronics MDmesh™ series: N-channel 600 V, 12 A, 338 mΩ Rds(on) at 10 V, 15.3 nC gate charge, TO-252 package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Base Product Number":"STD15","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"338mOhm @ 6A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"D-PAK (TO-252)","Gate Charge (Qg) (Max) @ Vgs":"15.3 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"607 pF @ 100 V","Current - Continuous Drain (Id) @ 25°C":"12A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.2600","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/949ac317e76d5a7191d247f5f93ddbfa.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD15N60DM6/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD15N60DM6?","answer":"The maximum Rds(on) is 338 mΩ at a drain current of 6 A and a gate-source voltage of 10 V. This is the figure to use for worst-case conduction loss calculations in your power stage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD15N60DM6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD15N60DM6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}