{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD150N3LLH6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD150N3LLH6","canonicalUrl":"https://icboms.com/stmicroelectronics/STD150N3LLH6","factsUrl":"https://icboms.com/api/mcp/products/STD150N3LLH6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics DeepGATE™, STripFET™ VI series STD150N3LLH6 N-Channel MOSFET, 30 V Vdss, 2.8 mOhm Rds(on) at 40 A, 10 V, 80 A continuous drain, DPAK surface-mount package, 175°C junction temperature.","salesMarkdown":"## 30 V, 2.8 mΩ — what this MOSFET delivers in a switching design Gate charge is 29 nC at 4.5 V, which means the driver doesn't need to push much current to turn the device on and off — switching losses stay manageable even at moderate frequencies. Continuous drain current is rated 80 A at the case temperature 25°C, but that number is package-limited; real-world current depends on PCB copper and airflow. ## Obsolete — sourcing the STD150N3LLH6 today STMicroelectronics lists the STD150N3LLH6 as obsolete. Any stock in the channel is what remains from the final production runs — franchised distributors may show zero inventory, and the part moves through independent surplus and broker networks. The 2.8 mΩ Rds(on) at 10 V drive is the figure that determines I²R loss in a continuous-duty switch or the bottom FET of a synchronous converter. At 40 A, that's about 4.5 W of dissipation in the die alone — the DPAK's thermal pad and board copper must pull that heat away.","metaTitle":"STD150N3LLH6 N-Channel MOSFET, 30 V, 2.8 mΩ, DPAK","metaDescription":"STD150N3LLH6 N-Channel MOSFET from STMicroelectronics DeepGATE/STripFET VI series. 30 V Vdss, 2.8 mΩ Rds(on) at 40 A, 80 A Id, DPAK.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"DeepGATE™, STripFET™ VI","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.5V @ 250µA","Base Product Number":"STD15","Operating Temperature":"175°C (TJ)","Rds On (Max) @ Id, Vgs":"2.8mOhm @ 40A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"29 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"3700 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.0300","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/cc002cbc3d7e5e6b94497c1cba2e1882.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD150N3LLH6/alternatives.json"},"ai":{"faq":[{"question":"Is STD150N3LLH6 obsolete?","answer":"Yes, STMicroelectronics has marked the STD150N3LLH6 as obsolete. No further production is planned. Stock is limited to existing inventory in the distribution channel."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD150N3LLH6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD150N3LLH6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}