{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD140N6F7","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD140N6F7","canonicalUrl":"https://icboms.com/stmicroelectronics/STD140N6F7","factsUrl":"https://icboms.com/api/mcp/products/STD140N6F7","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STripFET™ STD140N6F7, N-Channel MOSFET, 60 V Vdss, 80 A Id, 3.8 mOhm Rds(on) @ 40 A, 10 V, 55 nC Qg, DPAK, -55 to 175 °C.","salesMarkdown":"It is designed for low-voltage, high-current switching applications such as synchronous rectification, DC-DC converters, motor drives, and battery management in industrial and automotive environments. ## Rds(on) and current rating — sizing the conduction path The 80 A continuous drain current rating at 25°C case temperature gives substantial headroom for surge or inrush events, but the designer must derate the current based on the actual case temperature — the 134 W power dissipation limit (Tc) governs the safe operating area. ## Gate charge and input capacitance — what they mean for switching speed The input capacitance also sets the Miller plateau duration, which directly affects turn-on and turn-off switching losses. ## Temperature range and package — deployment context The maximum gate-source voltage is ±20 V, so standard 10 V gate drives are safe.","metaTitle":"STD140N6F7 STripFET N-Channel MOSFET, 60 V, 3.8 mOhm","metaDescription":"STMicroelectronics STD140N6F7 N-channel MOSFET in DPAK, 60 V Vdss, 80 A Id, 3.8 mOhm Rds(on) at 10 V. Active lifecycle, 175°C junction.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"STripFET™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD140","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"3.8mOhm @ 40A, 10V","Power Dissipation (Max)":"134W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"55 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"3100 pF @ 30 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.8100","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/2e2102828b2d5c2b2ec9fa0ba8d6fd4b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD140N6F7/alternatives.json"},"ai":{"faq":[{"question":"What is the STD140N6F7 Vds rating?","answer":"The drain-to-source voltage (Vdss) is rated at 60 V. This is the maximum voltage the MOSFET can block when off; for reliable operation, derate to 80% or less of this value in continuous operation."},{"question":"Is STD140N6F7 available available via RFQ confirmation?","answer":"Stock levels and lead times are confirmed at the time of RFQ. The part is actively produced, so supply is generally available through the distribution channel."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD140N6F7","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD140N6F7 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}