{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD130N4F6AG","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD130N4F6AG","canonicalUrl":"https://icboms.com/stmicroelectronics/STD130N4F6AG","factsUrl":"https://icboms.com/api/mcp/products/STD130N4F6AG","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD130N4F6AG, Automotive AEC-Q101 STripFET F6 N-Channel MOSFET, 40V Vdss, 80A Id, 3.6mOhm Rds(on) at 10V Vgs, DPAK package, -55°C to 175°C junction temperature.","salesMarkdown":"The 3.6 mOhm maximum Rds(on) at 10V Vgs and 40A is the figure to size conduction losses against. At lower gate voltages the on-resistance climbs — the datasheet shows the drive voltage for achieving the rated Rds(on) is 10V, so a 12V or higher gate rail is the safe call for full saturation. The gate charge is 70 nC at 10V, which is moderate for this current class; a gate driver capable of sourcing and sinking a few amperes peak will keep switching edges clean. It is an automotive-qualified part (AEC-Q101), so the supply chain is typically managed through authorized distribution channels.","metaTitle":"STD130N4F6AG Automotive N-Channel MOSFET, 40V, 80A, DPAK","metaDescription":"STMicroelectronics STD130N4F6AG: AEC-Q101 qualified N-channel MOSFET, 40V Vdss, 80A Id, 3.6mOhm Rds(on) at 10V. Active production.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"Automotive, AEC-Q101, STripFET™ F6","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD130","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"3.6mOhm @ 40A, 10V","Power Dissipation (Max)":"143W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"70 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"4260 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.8200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/903ef8c737362224a1037f8c635b170a.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD130N4F6AG/alternatives.json"},"ai":{"faq":[{"question":"Is STD130N4F6AG AEC-Q101 qualified?","answer":"Yes, the STD130N4F6AG is listed as Automotive, AEC-Q101 qualified from the STripFET F6 series, making it suitable for automotive and other high-reliability applications."},{"question":"What is the Rds(on) of STD130N4F6AG at 10V Vgs?","answer":"The maximum Rds(on) is 3.6 mOhm at 40A drain current with 10V gate-to-source voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD130N4F6AG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD130N4F6AG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}