{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD12NM50ND","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD12NM50ND","canonicalUrl":"https://icboms.com/stmicroelectronics/STD12NM50ND","factsUrl":"https://icboms.com/api/mcp/products/STD12NM50ND","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ II series, N-Channel MOSFET, STD12NM50ND, 500V Vdss, 11A Id @ 25°C, 380mOhm Rds(on) @ 10V, 30nC Qg, DPAK (TO-252) surface mount package.","salesMarkdown":"## 500 V, 11 A N-channel MOSFET in DPAK — FDmesh™ II generation At 11 A full load, conduction loss runs about 46 W in the channel alone — that number sets the heatsinking requirement. The 100 W package dissipation limit at the case (Tc) means the DPAK's thermal pad needs a solid copper pour and via stitch to keep junction temperature under 150 °C in continuous operation. ## 30 nC gate charge — switching speed trade-off It keeps the gate drive energy manageable — a standard 1 A gate driver can switch it in the tens of nanoseconds — but the Miller plateau region still needs attention in the layout. For switching frequencies above 100 kHz, the gate charge losses start cutting into efficiency, so the trade-off between conduction and switching loss needs to be checked against the operating point. For BOM lines that already specify this MOSFET, the procurement path runs through independent distribution and surplus inventory.","metaTitle":"STD12NM50ND N-Channel MOSFET, 500V, 11A, DPAK","metaDescription":"STD12NM50ND N-Channel MOSFET from STMicroelectronics FDmesh™ II series. 500V Vdss, 11A Id, 380mOhm Rds(on). DPAK package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPAK (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STD12","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 5.5A, 10V","Power Dissipation (Max)":"100W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"30 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"850 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.0800","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD12NM50ND/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement or equivalent for STD12NM50ND?","answer":"No official replacement order code is listed for this part. For new designs, consider current-generation 500 V N-channel MOSFETs in DPAK from STMicroelectronics' MDmesh or FDmesh families. The DPAK pinout is standard, but verify Rds(on), gate charge, and thermal ratings against your operating point."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD12NM50ND","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD12NM50ND when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}