{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD12NM50N","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD12NM50N","canonicalUrl":"https://icboms.com/stmicroelectronics/STD12NM50N","factsUrl":"https://icboms.com/api/mcp/products/STD12NM50N","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD12NM50N, MDmesh™ II, N-Channel MOSFET, 500 V drain-source, 11 A continuous drain, 380 mOhm Rds(on) at 10 V, DPAK surface-mount package.","salesMarkdown":"## 500 V N-Channel MOSFET in DPAK — MDmesh II The MDmesh II structure provides fast switching with reduced gate charge — 30 nC typical at 10 V — and a low on-resistance of 380 mOhm at 5.5 A, 10 V gate drive. ## Key ratings for the switching design The 500 V drain-source rating places this MOSFET in the high-voltage class for off-line flyback and forward converters, PFC stages, and two-switch topologies. Gate charge of 30 nC at 10 V keeps switching losses moderate for a 500 V device, easing gate-drive design in the 50–150 kHz range. Input capacitance of 940 pF at 50 V drain-source is typical for this voltage class and sets the drive current requirement for a given rise time.","metaTitle":"STD12NM50N N-Channel MOSFET, 500 V, 11 A, DPAK","metaDescription":"STD12NM50N N-Channel MOSFET, 500 V drain-source, 11 A continuous drain, 380 mOhm Rds(on) at 10 V. MDmesh II series.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II","Package":"Tape & Reel (TR)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD12","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 5.5A, 10V","Power Dissipation (Max)":"100W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"30 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"940 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6417","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/7a8dc1b9175b945619b56d1d85bb66d3.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD12NM50N/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STD12NM50N?","answer":"For a pin-compatible alternative, evaluate other 500 V N-channel MOSFETs in DPAK from STMicroelectronics' MDmesh series or equivalent families from competitors, verifying Rds(on), gate charge, and thermal ratings against your design."},{"question":"What is the Rds(on) of STD12NM50N?","answer":"The maximum on-resistance is 380 mOhm at 5.5 A drain current with 10 V gate drive."},{"question":"Where can I buy STD12NM50N?","answer":"Submit an RFQ for current availability and pricing; quotes are confirmed at order time."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD12NM50N","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD12NM50N when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}