{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD12N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD12N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STD12N60M2","factsUrl":"https://icboms.com/api/mcp/products/STD12N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh M2 series, N-Channel MOSFET, 600 V Vdss, 9 A continuous drain, 450 mOhm Rds(on) at 10 V, 16 nC gate charge, DPAK (TO-252) surface-mount package.","salesMarkdown":"## 600 V, 9 A N-channel — MDmesh M2 for offline power conversion ## Gate drive and switching — 16 nC Qg at 10 V The drive voltage for the rated Rds(on) is 10 V, but the device can be driven from a 12 V rail or a dedicated gate-driver IC. The ±25 V maximum gate-source rating gives margin against ringing on the gate node in a typical flyback layout, though a series gate resistor and a Schottky clamp are still good practice when the trace inductance is high. ## Package and thermal — DPAK (TO-252) surface mount The STD12N60M2 comes in a standard DPAK (TO-252) surface-mount package with two leads and a tab (SC-63 equivalent).","metaTitle":"STD12N60M2 N-Channel MOSFET, 600 V, 9 A, DPAK","metaDescription":"STD12N60M2 N-Channel 600 V MOSFET, 9 A continuous drain, 450 mOhm Rds(on), 16 nC gate charge. MDmesh M2 series in DPAK. Active lifecycle, available to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ M2","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD12","Operating Temperature":"150°C(TJ)","Rds On (Max) @ Id, Vgs":"450mOhm @ 4.5A, 10V","Power Dissipation (Max)":"85W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"16 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"538 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"9A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.6000","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/26bb96a3771485e17f09f2bdf28ca1ab.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD12N60M2/alternatives.json"},"ai":{"faq":[{"question":"What are the differences between STD12N60M2 and STD12N60M1?","answer":"Both are 600 V N-channel MOSFETs in DPAK from the MDmesh family, but the M2 generation (STD12N60M2) typically offers lower Rds(on) and lower gate charge than the M1 variant, improving switching efficiency in the same footprint. The exact parametric differences should be verified against the respective datasheets for the specific operating point."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD12N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD12N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}