{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD12N50DM2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD12N50DM2","canonicalUrl":"https://icboms.com/stmicroelectronics/STD12N50DM2","factsUrl":"https://icboms.com/api/mcp/products/STD12N50DM2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ DM2 series, N-Channel MOSFET, Drain to Source Voltage: 500 V, Continuous Drain Current: 11 A, On-Resistance: 350 mOhm, Gate Charge: 16 nC, DPAK package.","salesMarkdown":"## 500 V N-channel MOSFET in DPAK — MDmesh DM2 series The STD12N50DM2 is housed in a surface-mount DPAK (TO-252) package, suitable for automated assembly in high-density power supplies, offline flyback converters, PFC stages, and motor-drive auxiliary supplies. ## Switching and conduction loss budget The 350 mΩ Rds(on) at 10 V gate drive is the conduction loss anchor: at 5.5 A the dissipation is about 10.6 W, which must be removed through the DPAK's thermal pad. The input capacitance of 628 pF at 100 V Vds keeps the Miller plateau short, aiding fast turn-on and turn-off transitions. The gate-source voltage is rated ±25 V, giving margin against ringing in hard-switched topologies.","metaTitle":"STD12N50DM2 N-Channel MOSFET, 500 V, 11 A, DPAK","metaDescription":"STD12N50DM2 N-channel MOSFET from STMicroelectronics MDmesh DM2 series. 500 V Vdss, 11 A Id, 350 mΩ Rds(on), DPAK package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ DM2","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STD12","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"350mOhm @ 5.5A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"16 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"628 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.9400","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/d7f41c4b347d449c69f67c64269b0876.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD12N50DM2/alternatives.json"},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD12N50DM2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD12N50DM2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}