{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD120N4F6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD120N4F6","canonicalUrl":"https://icboms.com/stmicroelectronics/STD120N4F6","factsUrl":"https://icboms.com/api/mcp/products/STD120N4F6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD120N4F6, N-Channel MOSFET, 40 V Vdss, 80 A continuous drain, 4 mOhm Rds(on) at 10 V, DPAK surface mount, AEC-Q101 qualified.","salesMarkdown":"The STD120N4F6 is listed as obsolete. If you have this part on a BOM line, you are looking at a last-time-buy or surplus-channel procurement. ## 4 mOhm at 40 A — the switching spec that matters That is a low on-resistance for a 40 V device in a DPAK, which keeps conduction losses down in a 80 A continuous-rated switch. The gate charge is 65 nC at 10 V, so the driver needs to source that charge for fast switching edges — budget the gate drive current against the switching frequency. ## Automotive-grade construction This is an AEC-Q101 qualified device from the DeepGATE and STripFET VI series, meaning it was characterised and released for automotive under-hood or chassis-domain switching applications. The DPAK (TO-252) footprint is a standard surface-mount power package, and the part is compatible with that footprint — the same pad layout used across many 40 V to 60 V N-channel MOSFETs in this class.","metaTitle":"STD120N4F6 N-Channel MOSFET, 40 V, 80 A, DPAK, Obsolete","metaDescription":"STD120N4F6 N-channel MOSFET, 40 V Vdss, 80 A continuous drain, 4 mOhm Rds(on) at 10 V. AEC-Q101 qualified.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Obsolete","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"Automotive, AEC-Q101, DeepGATE™, STripFET™ VI","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Obsolete","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD120","Operating Temperature":"-55°C~175°C(TJ)","Rds On (Max) @ Id, Vgs":"4mOhm @ 40A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"65 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"3850 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.9200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/cf12c06911dd7d802dd92a10163d1061.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD120N4F6/alternatives.json"},"ai":{"faq":[{"question":"What is the replacement for STD120N4F6?","answer":"A pin-compatible replacement would be another 40 V N-channel MOSFET in DPAK with similar Rds(on) and gate charge — qualification is required before substitution."},{"question":"Is STD120N4F6 compatible with TO-252 footprint?","answer":"Yes, the package is DPAK (TO-252-3, DPak, SC-63), which is the standard TO-252 surface-mount footprint used across many power MOSFETs in this voltage class."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD120N4F6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD120N4F6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T15:16:16.426Z","lastPublished":"2026-07-16T15:16:16.426Z","indexable":true}}