{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD11NM60ND","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD11NM60ND","canonicalUrl":"https://icboms.com/stmicroelectronics/STD11NM60ND","factsUrl":"https://icboms.com/api/mcp/products/STD11NM60ND","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD11NM60ND, N-Channel MOSFET, FDmesh™ II, 600 V Vdss, 10 A Id, 450 mOhm Rds(on) at 10 V, DPAK (TO-252), Surface Mount.","salesMarkdown":"## 600 V N-channel in a DPAK — where the rating matters The FDmesh™ II technology gives this part a fast-recovery body diode, which reduces reverse-recovery losses in bridge topologies like LLC resonant converters or phase-shifted full bridges — a genuine difference from older planar MOSFETs that would ring and dissipate more in that diode turn-off event. ## 450 mOhm on-resistance — what it costs you in copper and airflow That works out to roughly 11 W conduction loss at 5 A — a number that drives the heatsinking decision, not just the silicon rating. The DPAK (TO-252) package has an exposed tab on the drain — the PCB copper area under that tab is the primary heatsink, so the layout engineer should allocate enough copper pour and vias to a ground plane to pull heat out. The base product number STD11 covers a family of variants; the ND suffix indicates the FDmesh™ II version with the fast diode. If you are sourcing for a production run, this is a standard catalog item, not a niche or phased-out line. ## Gate drive and switching — the 30 nC number The maximum gate charge is 30 nC at a 10 V gate drive. That is modest — a typical gate-driver IC or a PWM controller output can charge that in a few hundred nanoseconds, keeping switching losses manageable at frequencies up to 100 kHz or so. The input capacitance is 850 pF at 50 V drain bias, which sets the drive impedance requirement for clean turn-on without ringing. The gate-source voltage is rated to ±25 V, so standard 12 V or 15 V gate drives are safe; no external clamp needed unless the drive overshoots beyond that.","metaTitle":"STD11NM60ND N-Channel MOSFET, 600 V, 10 A, DPAK","metaDescription":"STD11NM60ND N-channel 600 V 10 A MOSFET in DPAK. Rds(on) 450 mOhm at 10 V. FDmesh II technology. Active, available to order.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STD11","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"450mOhm @ 5A, 10V","Power Dissipation (Max)":"90W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"30 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"850 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.5700","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/566f28712a2656f50187cfa717b7cf44.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD11NM60ND/alternatives.json"},"ai":{"faq":[{"question":"Is STD11NM60ND obsolete?","answer":"No, the STD11NM60ND is listed as active. It is a current-production part suitable for new designs."},{"question":"What is the Rds(on) of STD11NM60ND?","answer":"The maximum on-resistance is 450 mOhm at a drain current of 5 A and a gate-source voltage of 10 V. This is the value to use for worst-case conduction loss calculations in the power stage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD11NM60ND","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD11NM60ND when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}