{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD11N50M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD11N50M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STD11N50M2","factsUrl":"https://icboms.com/api/mcp/products/STD11N50M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STD11N50M2, MDmesh™ II Plus series, N-Channel MOSFET, 500 V Vdss, 8 A continuous drain (Tc), 530 mOhm Rds(on) at 10 V, DPAK (TO-252) surface-mount package, -55°C to 150°C junction temperature.","salesMarkdown":"## 500 V, 8 A N-channel MOSFET in DPAK — MDmesh II Plus series The STMicroelectronics STD11N50M2 is an N-channel power MOSFET built on the MDmesh™ II Plus technology platform, designed for high-voltage switching applications. ## Parametric highlights for switching power supply design Combined with an input capacitance (Ciss) of 395 pF at 100 V drain-source, the device presents a light load to the gate driver, enabling faster turn-on and turn-off transitions. The 85 W maximum power dissipation at Tc provides a generous thermal budget when mounted on adequate copper area. ## Package and mounting — DPAK (TO-252) The DPAK (TO-252) surface-mount package has a 2-lead plus tab configuration (SC-63 variant). The exposed tab is the drain terminal and provides the primary thermal path to the PCB. When laying out the board, ensure the drain pad is connected to a sufficient copper area for heat spreading; the 85 W dissipation rating assumes a properly heatsunk case.","metaTitle":"STD11N50M2 N-Channel MOSFET, 500 V, 8 A, MDmesh II Plus","metaDescription":"STD11N50M2 N-channel MOSFET from STMicroelectronics MDmesh II Plus series. 500 V Vdss, 8 A continuous drain, 530 mOhm Rds(on) at 10 V.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ II Plus","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Base Product Number":"STD11","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"530mOhm @ 4A, 10V","Power Dissipation (Max)":"85W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"12 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"395 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/89e51022a0fde0a5f2362ab328705839.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD11N50M2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STD11N50M2?","answer":"This is the value to use for conduction loss calculations in the worst case."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD11N50M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD11N50M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}