{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD10NM60ND","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD10NM60ND","canonicalUrl":"https://icboms.com/stmicroelectronics/STD10NM60ND","factsUrl":"https://icboms.com/api/mcp/products/STD10NM60ND","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics FDmesh™ II series, N-Channel MOSFET, 600 V drain-source, 8 A continuous drain at 25°C, 600 mOhm Rds(on) at 4 A, 10 V gate drive, 20 nC gate charge, DPAK (TO-252) surface-mount package, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V FDmesh™ II N-channel — the offline power switcher This series features ST's fast-recovery body diode technology, which reduces reverse-recovery charge and improves efficiency in bridge topologies like LLC resonant converters and active PFC stages. Drive voltage for the rated Rds(on) is 10 V, with a max Vgs of ±25 V. The 5 V threshold maximum at 250 µA drain current gives a comfortable margin above logic-level gate signals. ## DPAK footprint and thermal design The DPAK (TO-252) package with two leads and a tab is a standard surface-mount footprint for medium-power MOSFETs.","metaTitle":"STD10NM60ND N-Channel MOSFET, 600 V, 8 A, DPAK","metaDescription":"STD10NM60ND N-channel MOSFET from STMicroelectronics FDmesh™ II series. 600 Vdss, 8 A continuous drain, 600 mOhm Rds(on). Active lifecycle. DPAK package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"FDmesh™ II","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STD10","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 4A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"577 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.1600","priceTiers":null},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD10NM60ND/alternatives.json"},"ai":{"faq":[{"question":"Is STD10NM60ND compatible with my existing TO-252 footprint?","answer":"Yes, the STD10NM60ND is in a standard TO-252 (DPAK) surface-mount package with two leads and a tab. It is footprint-compatible with any DPAK layout."},{"question":"What is the closest pin-compatible alternative to STD10NM60ND?","answer":"The STD10NM60N is the earlier generation in the same DPAK package and 600 V class. The ND suffix denotes the FDmesh™ II fast-recovery diode variant, which improves efficiency in bridge topologies. Both are pin-compatible."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD10NM60ND","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD10NM60ND when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}