{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD10N60DM2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD10N60DM2","canonicalUrl":"https://icboms.com/stmicroelectronics/STD10N60DM2","factsUrl":"https://icboms.com/api/mcp/products/STD10N60DM2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ DM2 series N-Channel MOSFET, STD10N60DM2, 650 V drain-source, 8 A continuous drain, 530 mΩ Rds(on) at 10 V, DPAK surface-mount package.","salesMarkdown":"## 650 V N-channel MOSFET in DPAK — design-fit summary That makes the STD10N60DM2 a candidate for higher-frequency hard-switching topologies where switching losses dominate. The input capacitance is 529 pF at 100 V drain-source, consistent with the low-Qg design. Drive voltage for rated Rds(on) is 10 V, with a maximum gate-source voltage of ±25 V. ## Operating temperature range and reliability The MDmesh DM2 process delivers avalanche ruggedness typical of the series, though the standard datasheet should be consulted for single-pulse and repetitive avalanche ratings. The device is RoHS compliant per ST's standard policy.","metaTitle":"STD10N60DM2 N-Channel MOSFET, 650 V, 8 A, DPAK","metaDescription":"STD10N60DM2 N-channel MOSFET from STMicroelectronics MDmesh DM2 series. 650 V drain-source, 8 A continuous drain, 530 mΩ Rds(on), DPAK package.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"MDmesh™ DM2","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Base Product Number":"STD10","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"530mOhm @ 4A, 10V","Power Dissipation (Max)":"109W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"15 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"529 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5200","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/738ca92bb1eac4a1754f08e1691b6461.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD10N60DM2/alternatives.json"},"ai":{"faq":[{"question":"Where can I buy STD10N60DM2?","answer":"The STD10N60DM2 is available to order through independent distribution. Submit an RFQ to receive a firm quote with current availability and pricing."},{"question":"What is the Vds rating of STD10N60DM2?","answer":"The drain-to-source voltage rating is 650 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD10N60DM2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD10N60DM2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}