{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STD100N10F7","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STD100N10F7","canonicalUrl":"https://icboms.com/stmicroelectronics/STD100N10F7","factsUrl":"https://icboms.com/api/mcp/products/STD100N10F7","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics DeepGATE, STripFET VII series, N-Channel MOSFET, 100V Vdss, 80A Id, 8mOhm Rds(on) at 40A 10V, 61nC Qg, DPAK package, -55 to 175°C.","salesMarkdown":"The STD100N10F7: Total gate charge is 61 nC at 10 V, with input capacitance 4369 pF at 50 V drain bias. ## Thermal range and package reality Junction temperature range is -55 to 175 °C, exceeding the typical automotive grade AEC-Q101 requirement of 175 °C max. Without that copper spread, the junction derates rapidly above 100 °C ambient. The base product number STD100 covers multiple Rds(on) and current variants in the same STripFET VII family; the F7 suffix identifies this specific 8 mOhm / 80 A bin.","metaTitle":"STD100N10F7 N-Channel MOSFET, 100V 80A, 8mOhm Rds(on) DPAK","metaDescription":"STD100N10F7 N-channel 100V 80A MOSFET from STMicroelectronics DeepGATE/STripFET VII series. 8mOhm Rds(on) at 10V, 61nC gate charge, DPAK package.","metaKeywords":null},"attributes":{"series":"DeepGATE™, STripFET™ VII","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"STMicroelectronics","Series":"DeepGATE™, STripFET™ VII","Package":"Tape & Reel (TR) Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 250µA","Base Product Number":"STD100","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"8mOhm @ 40A, 10V","Power Dissipation (Max)":"120W (Tc)","Supplier Device Package":"DPAK","Gate Charge (Qg) (Max) @ Vgs":"61 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"4369 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.7700","priceTiers":[{"qty":1,"price":"$2.77000","currency":"USD"},{"qty":10,"price":"$2.30500","currency":"USD"},{"qty":100,"price":"$1.83430","currency":"USD"},{"qty":500,"price":"$1.55212","currency":"USD"},{"qty":1000,"price":"$1.31694","currency":"USD"},{"qty":2500,"price":"$1.25110","currency":"USD"},{"qty":5000,"price":"$1.20406","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/bb09d7b77b85eb51207049fd4472e2b0.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STD100N10F7/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of the STD100N10F7?","answer":"The maximum Rds(on) is 8 mOhm at 40 A drain current with 10 V gate drive. Typical on-resistance is 6.8 mOhm at the same bias."},{"question":"What is the maximum drain current of the STD100N10F7?","answer":"Continuous drain current is 80 A at 25 °C case temperature. Derate for higher case temperatures per the power dissipation curve in the datasheet."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STD100N10F7","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STD100N10F7 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}