{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STB8N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STB8N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STB8N65M5","factsUrl":"https://icboms.com/api/mcp/products/STB8N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STB8N65M5, MDmesh V series, N-channel MOSFET, 650 V Vdss, 7 A continuous drain, 600 mOhm Rds(on), 15 nC gate charge, D2PAK (TO-263) surface mount.","salesMarkdown":"## Gate charge and switching — what 15 nC buys you ## Package and mounting — D2PAK thermal pad The ±25 V maximum gate-source rating gives margin for ringing on the gate node, but a gate resistor is still needed to damp the LC tank formed by the PCB trace and the input capacitance. ROHS3 compliant.","metaTitle":"STB8N65M5 N-Channel MOSFET 650 V 7 A MDmesh V D2PAK","metaDescription":"STB8N65M5 N-channel 650 V 7 A MOSFET, MDmesh V series, 600 mOhm Rds(on), 15 nC gate charge, D2PAK. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ V","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ V","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 3.5A, 10V","Power Dissipation (Max)":"70W (Tc)","Supplier Device Package":"D²PAK (TO-263)","Gate Charge (Qg) (Max) @ Vgs":"15 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"690 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.72","priceTiers":[{"qty":1,"price":"$2.72000","currency":"USD"},{"qty":10,"price":"$2.28800","currency":"USD"},{"qty":100,"price":"$1.85090","currency":"USD"},{"qty":500,"price":"$1.64524","currency":"USD"},{"qty":1000,"price":"$1.40874","currency":"USD"},{"qty":2000,"price":"$1.32648","currency":"USD"},{"qty":5000,"price":"$1.27262","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e680c7604ea02fb6b51fc3c50e27e091.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STB8N65M5/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STB8N65M5?","answer":"Maximum on-resistance is 600 mOhm at 3.5 A drain current with 10 V gate drive. This is the value to use for worst-case conduction loss calculations at 25 °C junction; Rds(on) increases with temperature per the normalised curve in the datasheet."},{"question":"How does STB8N65M5 compare to STB8N65M4?","answer":"The STB8N65M4 is the predecessor in the MDmesh IV family. The M5 generation typically offers lower Rds(on) and lower gate charge for the same voltage rating, improving switching efficiency. Pin-compatible in the same D2PAK footprint — a drop-in upgrade for existing layouts."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STB8N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STB8N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}