{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STB33N60DM6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STB33N60DM6","canonicalUrl":"https://icboms.com/stmicroelectronics/STB33N60DM6","factsUrl":"https://icboms.com/api/mcp/products/STB33N60DM6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M6 series, STB33N60DM6, N-Channel MOSFET, 600V Vdss, 25A Id, 128mOhm Rds(on) at 10V, 35nC Qg, D2PAK (TO-263), -55 to 150°C.","salesMarkdown":"## 600V, 25A, 128mOhm — the switching FET for a PFC or resonant converter The STB33N60DM6 is an N-channel power MOSFET from ST's MDmesh™ M6 series, rated for 600 V drain-source breakdown and 25 A continuous drain current at 25°C case temperature. The on-resistance is 128 mOhm maximum at 12.5 A with a 10 V gate drive — the number that sets conduction losses in a hard-switched topology. Gate charge is 35 nC at 10 V, which keeps the gate-drive energy per cycle low enough that a standard bootstrap driver can handle it without excessive dissipation. Input capacitance at 100 V drain bias is 1500 pF, a figure that influences the switching transition time and the driver's peak current requirement. The part lives in a D2PAK (TO-263) surface-mount package with an exposed tab. That tab is the drain connection and must be soldered to a copper island on the PCB for thermal management — the package is rated for 190 W power dissipation at case temperature 25°C. The junction temperature range spans -55°C to 150°C, so it can sit in a hot industrial cabinet or an outdoor telecom rectifier without derating surprises. ## What the gate charge and capacitance mean at the bench A 35 nC total gate charge at 10 V means the driver needs to source and sink about 35 nC per switching cycle. The 1500 pF input capacitance at 100 V drain bias is the Ciss the driver sees during the Miller plateau. ## Lifecycle and sourcing — active, no LTB watch The STB33N60DM6 carries an Active product status and is ROHS3 compliant. There is no end-of-life notice or last-time-buy window to track. No second-source alternate is listed in the official record, but the D2PAK footprint is common across the MDmesh M6 family, so a pin-compatible density step (higher or lower Rds(on)) is a board-level option if the BOM needs flexibility.","metaTitle":"STB33N60DM6 MOSFET N-CH 600V 25A D2PAK, 128mOhm","metaDescription":"STB33N60DM6 N-channel 600V 25A MOSFET in D2PAK. 128mOhm Rds(on), 35nC gate charge, -55 to 150°C. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"MDmesh™ M6","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ M6","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"128mOhm @ 12.5A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"D²PAK (TO-263)","Gate Charge (Qg) (Max) @ Vgs":"35 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1500 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"25A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.69","priceTiers":[{"qty":1,"price":"$5.69000","currency":"USD"},{"qty":10,"price":"$5.10700","currency":"USD"},{"qty":100,"price":"$4.18440","currency":"USD"},{"qty":500,"price":"$3.56214","currency":"USD"},{"qty":1000,"price":"$3.54270","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d16f2b813c37c5fbd01dddf7317dec78.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STB33N60DM6/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STB33N60DM6?","answer":"The maximum on-resistance is 128 mOhm at 12.5 A drain current with a 10 V gate drive. That is the spec to use for worst-case conduction loss calculations."},{"question":"What is the direct replacement for STB33N60DM6?","answer":"No official direct replacement is listed in the manufacturer's documentation. The MDmesh M6 series includes other D2PAK devices with different Rds(on) and current ratings that share the same footprint — a density step is possible if the BOM allows a spec trade."},{"question":"How does STB33N60DM6 compare to STB33N60M2?","answer":"The STB33N60M2 is an earlier MDmesh M2 generation part with the same voltage and current ratings but higher typical Rds(on) and gate charge. The M6 generation improves on-resistance and switching figures, which translates to lower conduction and switching losses in the same footprint. Exact numbers depend on the specific variant; check the respective datasheets for the delta."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STB33N60DM6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STB33N60DM6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:51:14.863Z","lastPublished":"2026-07-22T18:51:14.863Z","indexable":true}}