{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STB24N60M6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STB24N60M6","canonicalUrl":"https://icboms.com/stmicroelectronics/STB24N60M6","factsUrl":"https://icboms.com/api/mcp/products/STB24N60M6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M6 series, STB24N60M6, N-Channel 600 V MOSFET, 17 A, 190 mOhm Rds(on) at 8.5 A, 10 V, 23 nC gate charge, D2PAK (TO-263), -55 to 150 °C.","salesMarkdown":"## 190 mOhm at 8.5 A — conduction loss anchor The STB24N60M6 is an N-channel 600 V MOSFET from ST's MDmesh™ M6 series, in a D2PAK (TO-263) surface-mount package. Rds(on) is specified at 190 mOhm max with Vgs = 10 V, Id = 8.5 A, at 25 °C junction. That same on-resistance rises with temperature — expect roughly 1.6× at 125 °C junction, a factor to budget into the thermal loop. The 23 nC gate charge is low for a 600 V, 17 A die; it keeps the switching transition short, which reduces turn-on and turn-off losses in hard-switched topologies. Input capacitance Ciss is 960 pF at 100 V drain — a figure that helps estimate the driver's peak current requirement. The D2PAK (TO-263) is a surface-mount package with a large exposed tab on the bottom. For rework, the tab's thermal mass means a preheat plate or bottom-side heater is almost mandatory; a hot-air nozzle alone will struggle to get the solder paste under the tab fully liquid without scorching the board. Orientation is marked by a chamfer on the package body.","metaTitle":"STB24N60M6 N-Ch 600 V MOSFET, 190 mOhm Rds(on) – MDmesh M6","metaDescription":"STB24N60M6 N-channel 600 V MOSFET in D2PAK. 190 mOhm Rds(on) at 8.5 A, 23 nC gate charge. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"MDmesh™ M6","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ M6","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D2PAK (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 8.5A, 10V","Power Dissipation (Max)":"130W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"23 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"960 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"17A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.95","priceTiers":[{"qty":1,"price":"$2.95000","currency":"USD"},{"qty":10,"price":"$2.47800","currency":"USD"},{"qty":100,"price":"$2.00430","currency":"USD"},{"qty":500,"price":"$1.78164","currency":"USD"},{"qty":1000,"price":"$1.52553","currency":"USD"},{"qty":2000,"price":"$1.43645","currency":"USD"},{"qty":5000,"price":"$1.37812","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7dd48aae34a1b8f3510eb62bb5738efd.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STB24N60M6/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of the STB24N60M6?","answer":"Maximum on-resistance is 190 mOhm at Id = 8.5 A and Vgs = 10 V, measured at 25 °C junction temperature."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STB24N60M6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STB24N60M6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}