{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STB22N60M6","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STB22N60M6","canonicalUrl":"https://icboms.com/stmicroelectronics/STB22N60M6","factsUrl":"https://icboms.com/api/mcp/products/STB22N60M6","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ M6, N-Channel MOSFET, 600 V, 15 A, 230 mOhm @ 7.5 A, 10 V, 20 nC @ 10 V, D²PAK (TO-263), -55°C to 150°C.","salesMarkdown":"## 600 V, 15 A — MDmesh M6 in a D2PAK The STB22N60M6: It comes in a surface-mount D²PAK (TO-263) package, which provides a low-inductance path for the drain tab and a solderable thermal pad for heatsinking through the PCB. ## 230 mOhm Rds(on) and 20 nC gate charge Maximum on-resistance is 230 mOhm at 7.5 A drain current with 10 V gate drive — this sets the conduction loss floor for a 15 A design and directly influences heatsink sizing. Total gate charge is 20 nC at 10 V, a low figure for a 600 V device that keeps the switching transition fast and reduces cross-conduction losses in hard-switched topologies. Input capacitance is 800 pF at 100 V drain-source.","metaTitle":"STB22N60M6 MOSFET N-CH 600V 15A D2PAK, 230mOhm Rds(on)","metaDescription":"STB22N60M6 N-channel 600V 15A MOSFET in D2PAK. 230mOhm Rds(on) at 10V, 20nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ M6","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ M6","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.75V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"230mOhm @ 7.5A, 10V","Power Dissipation (Max)":"130W (Tc)","Supplier Device Package":"D²PAK (TO-263)","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"800 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"15A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.99","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.99000","currency":"USD"},{"qty":10,"price":"$2.50800","currency":"USD"},{"qty":100,"price":"$2.02890","currency":"USD"},{"qty":500,"price":"$1.80346","currency":"USD"},{"qty":1000,"price":"$1.54421","currency":"USD"},{"qty":2000,"price":"$1.45404","currency":"USD"},{"qty":5000,"price":"$1.39500","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/4f2d11fe9456fa50272d159865edc445.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) and gate charge of STB22N60M6?","answer":"Maximum Rds(on) is 230 mOhm at 7.5 A with 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STB22N60M6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STB22N60M6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}