{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STB20NM50T4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STB20NM50T4","canonicalUrl":"https://icboms.com/stmicroelectronics/STB20NM50T4","factsUrl":"https://icboms.com/api/mcp/products/STB20NM50T4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ series, STB20NM50T4, N-Channel MOSFET, 550 Vdss, 20 A continuous drain, 250 mOhm Rds(on) at 10 V, 56 nC gate charge, D²Pak (TO-263) surface-mount package.","salesMarkdown":"The 56 nC total gate charge at 10 V means a 1 A gate driver can switch this FET in about 56 ns; a weaker driver extends the switching edges and increases crossover loss. ## Gate drive and switching — the 56 nC number matters more than the Rds(on) in hard-switched designs At 10 V gate drive the 56 nC gate charge is modest for a 550 V / 20 A device — it keeps the driver stage simple and the switching losses predictable in a 100 kHz PFC or flyback. The 1480 pF input capacitance at 25 V drain bias is a sanity check for the driver's peak current capability; a 1 A driver charges it in roughly 1.5 µs. The ±30 V maximum gate rating gives headroom for ringing on the gate node without an external clamp zener in most layouts. ## Package and thermal — the D²Pak tab is the primary heat path The surface-mount package suits automated assembly but requires a reflow profile compatible with the lead-free solder (ROHS3 compliant). It is ROHS3 compliant.","metaTitle":"STB20NM50T4 N-Channel MOSFET, 550 V, 20 A, MDmesh™","metaDescription":"STB20NM50T4 N-Channel MOSFET from STMicroelectronics MDmesh™ series. 550 Vdss, 20 A continuous drain, 250 mOhm Rds(on) at 10 V. Active lifecycle.","metaKeywords":null},"attributes":{"series":"MDmesh™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Operating Temperature":"-65°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"250mOhm @ 10A, 10V","Power Dissipation (Max)":"192W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"56 nC @ 10 V","Drain to Source Voltage (Vdss)":"550 V","Input Capacitance (Ciss) (Max) @ Vds":"1480 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"20A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.71","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$5.71000","currency":"USD"},{"qty":10,"price":"$5.12800","currency":"USD"},{"qty":100,"price":"$4.20180","currency":"USD"},{"qty":500,"price":"$3.57692","currency":"USD"},{"qty":1000,"price":"$3.55740","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c76f5656c84c587073c8fcd1addbde51.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of STB20NM50T4?","answer":"The maximum on-resistance is 250 mOhm at 10 A drain current with 10 V gate drive. This is the conduction loss figure to use for thermal calculations at the rated operating point."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STB20NM50T4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STB20NM50T4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}