{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STB20N65M5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STB20N65M5","canonicalUrl":"https://icboms.com/stmicroelectronics/STB20N65M5","factsUrl":"https://icboms.com/api/mcp/products/STB20N65M5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ V series, STB20N65M5, N-Channel MOSFET, 650 V Vdss, 18 A Id, 190 mOhm Rds(on) at 10 V, 36 nC Qg, D²PAK (TO-263) surface-mount package, 150 °C junction temperature.","salesMarkdown":"## Gate charge and switching behaviour Input capacitance is 1434 pF at 100 V drain bias. ## Thermal and package constraints Maximum power dissipation is 130 W at case temperature, with the 150 °C junction temperature as the absolute limit. The D²PAK (TO-263) surface-mount package requires a copper land pattern on the PCB to sink heat — the tab area under the package sets the effective thermal resistance. For continuous operation near 18 A, a heatsink or forced airflow is assumed; at lower load currents the PCB copper alone may suffice.","metaTitle":"STB20N65M5 MOSFET N-Ch 650V 18A D2PAK, MDmesh V","metaDescription":"STMicroelectronics STB20N65M5 N-channel 650V 18A MOSFET in D2PAK. Rds(on) 190mOhm at 9A, 36nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ V","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ V","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 250µA","Operating Temperature":"150°C (TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 9A, 10V","Power Dissipation (Max)":"130W (Tc)","Supplier Device Package":"D²PAK (TO-263)","Gate Charge (Qg) (Max) @ Vgs":"36 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1434 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"18A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.33","priceTiers":[{"qty":1,"price":"$3.33000","currency":"USD"},{"qty":10,"price":"$2.79300","currency":"USD"},{"qty":100,"price":"$2.25920","currency":"USD"},{"qty":500,"price":"$2.00820","currency":"USD"},{"qty":1000,"price":"$1.71952","currency":"USD"},{"qty":2000,"price":"$1.61912","currency":"USD"},{"qty":5000,"price":"$1.55338","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/29e05bee7377802c1188d93b0be89989.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STB20N65M5/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STB20N65M5?","answer":"Maximum on-resistance is 190 mOhm at 9 A drain current with 10 V gate drive. This is the value used for conduction-loss calculations at 25 °C junction; actual Rds(on) increases with temperature per the normalised curve in the datasheet."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STB20N65M5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STB20N65M5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}