{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STB15N80K5","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STB15N80K5","canonicalUrl":"https://icboms.com/stmicroelectronics/STB15N80K5","factsUrl":"https://icboms.com/api/mcp/products/STB15N80K5","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics STB15N80K5, SuperMESH5™ N-Channel MOSFET, 800V Vdss, 14A Id, 375mOhm Rds(on) at 10V, D2PAK (TO-263), -55°C to 150°C.","salesMarkdown":"## 800 V N-channel in D2PAK — the SuperMESH5™ switching MOSFET The STB15N80K5 is an 800 V, 14 A N-channel power MOSFET from ST's SuperMESH5™ series, built on a strip-layout vertical DMOS process that cuts the on-resistance per unit area compared to earlier generations. Packaged in a D2PAK (TO-263) surface-mount case, it targets high-voltage switching applications where conduction loss and switching speed both matter — offline flyback converters, PFC stages, two-switch forward topologies, and LLC resonant converters in the 150–500 W range. ## 375 mOhm on-resistance — conduction loss floor at 7 A This is the figure to use for worst-case conduction loss calculations at elevated junction temperature — the datasheet's typical curve shows Rds(on) roughly doubles from 25°C to 150°C, so a realistic 150°C junction pushes the effective resistance toward 750 mOhm. At a 100 kHz switching frequency the average gate-drive current is about 3.2 mA, well within the capability of a standard MOSFET driver IC. The 1100 pF input capacitance at 100 V drain-source confirms the moderate switching speed — expect clean turn-on and turn-off edges with a 10–15 Ohm gate resistor to damp ringing. ## 190 W dissipation and the heatsink question The 190 W maximum power dissipation at case temperature 25°C is a theoretical ceiling under ideal thermal interface — real-world dissipation is set by the junction-to-ambient thermal resistance, which for a D2PAK soldered to a typical 1 oz copper pad on a 2-layer board sits around 40–50°C/W. At 14 A continuous current with 375 mOhm Rds(on) the conduction loss alone is 73.5 W, which would push the junction above 150°C without a heatsink and forced airflow. For any continuous load above a few amps, a heatsink is mandatory. The 5 V typical gate threshold at 100 µA drain current is high enough to keep the device off during power-up transients on a 12 V gate-drive rail.","metaTitle":"STB15N80K5 N-Channel 800V 14A MOSFET, SuperMESH5™, 375mOhm","metaDescription":"STB15N80K5 N-Channel 800V 14A MOSFET from STMicroelectronics SuperMESH5™ series. 375mOhm Rds(on) at 10V. D2PAK package. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"SuperMESH5™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SuperMESH5™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5V @ 100µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"375mOhm @ 7A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"D²PAK (TO-263)","Gate Charge (Qg) (Max) @ Vgs":"32 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"1100 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"14A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.32","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$5.59000","currency":"USD"},{"qty":10,"price":"$5.01900","currency":"USD"},{"qty":100,"price":"$4.11190","currency":"USD"},{"qty":500,"price":"$3.50038","currency":"USD"},{"qty":1000,"price":"$3.48128","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/0ed842593d1ec0b93fe3487786aa25da.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the exact RDS(on) of STB15N80K5 at 10V and 7A?","answer":"This is a maximum limit at 25°C junction temperature; the typical value is lower, and the resistance increases with temperature."},{"question":"Does STB15N80K5 require a heatsink for a 14A continuous current?","answer":"Yes. Without a heatsink and forced airflow, the junction temperature will exceed the 150°C maximum rating. A properly sized heatsink is required for any continuous load above a few amps."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STB15N80K5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STB15N80K5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}