{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STB13N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STB13N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STB13N60M2","factsUrl":"https://icboms.com/api/mcp/products/STB13N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II Plus series, STB13N60M2, N-Channel MOSFET, 600 V Vdss, 11 A Id, 380 mOhm Rds(on), 17 nC Qg, D²Pak (TO-263), -55°C to 150°C.","salesMarkdown":"## Gate charge and switching performance Total gate charge is 17 nC at 10 V gate drive — a low figure that lets a standard gate driver or PWM controller switch the FET with minimal crossover losses. Input capacitance is 580 pF at 100 V drain-source, which together with the gate charge defines the switching speed boundary in a flyback or LLC converter.","metaTitle":"STB13N60M2 N-Channel MOSFET, 600 V, 11 A, D²Pak","metaDescription":"STB13N60M2 N-channel MOSFET from STMicroelectronics MDmesh II Plus series. 600 V Vdss, 380 mOhm Rds(on), 17 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ II Plus","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 5.5A, 10V","Power Dissipation (Max)":"110W (Tc)","Supplier Device Package":"D²PAK (TO-263)","Gate Charge (Qg) (Max) @ Vgs":"17 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"580 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.25","priceTiers":[{"qty":1,"price":"$2.25000","currency":"USD"},{"qty":10,"price":"$1.86800","currency":"USD"},{"qty":100,"price":"$1.48720","currency":"USD"},{"qty":500,"price":"$1.25838","currency":"USD"},{"qty":1000,"price":"$1.06771","currency":"USD"},{"qty":2000,"price":"$1.01433","currency":"USD"},{"qty":5000,"price":"$0.97619","currency":"USD"},{"qty":10000,"price":"$0.94388","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/14f386562f9d38e041d530d3f7d44077.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STB13N60M2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STB13N60M2?","answer":"Maximum on-resistance is 380 mOhm at 5.5 A drain current with 10 V gate drive. This is the figure to use for worst-case conduction loss calculations at the rated current."},{"question":"What is the gate charge of STB13N60M2?","answer":"This low value allows fast switching with modest gate drive current — a 10 V driver sourcing 1 A can charge the gate in under 20 ns."},{"question":"Is STB13N60M2 RoHS compliant?","answer":"Yes, it is ROHS3 compliant per the manufacturer's listing."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STB13N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STB13N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}