{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STB12NK80ZT4","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STB12NK80ZT4","canonicalUrl":"https://icboms.com/stmicroelectronics/STB12NK80ZT4","factsUrl":"https://icboms.com/api/mcp/products/STB12NK80ZT4","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics SuperMESH™ STB12NK80ZT4, N-Channel MOSFET, 800 V Vdss, 10.5 A Id, 750 mOhm Rds(on) at 10 V, 87 nC Qg, D2PAK surface mount, -55 to 150 °C.","salesMarkdown":"## 800 V N-channel — what it handles and where it fits That 800 V ceiling puts it squarely in offline flyback converters, PFC stages, and 2-switch forward topologies where the primary-side switch sees the full rectified DC bus plus reflected voltage. ## Gate drive and switching — what the numbers mean Gate charge totals 87 nC at 10 V, which is moderate for an 800 V part. A typical gate driver delivering 1 A peak can switch this FET in under 100 ns, but the 2620 pF input capacitance at 25 V drain bias means the driver sees a capacitive load that slows the edges if the gate loop is not tight. The recommended drive voltage is 10 V to achieve the rated Rds(on); driving it from a 12 V rail is fine, but stay within the ±30 V Vgs max. The 4.5 V threshold at 100 µA is a typical logic-level threshold for a standard MOSFET — not a sub-1 V logic-level part, so a 5 V gate signal from a microcontroller will not fully enhance it. ## Thermal budget and derating Maximum power dissipation is 190 W at case temperature, but that is the theoretical limit with an ideal heatsink. In a real D2PAK layout on a 2-layer board with 1 oz copper, the effective dissipation is much lower — expect to derate to around 50-60 W continuous with a heatsink on the tab. The junction temperature range is -55 to 150 °C, so the part can live in hot environments like a sealed power supply or an outdoor telecom rectifier. If the ambient is 85 °C, the 10.5 A rating at 25 °C must be derated per the datasheet curve — the actual continuous current at 100 °C case temperature is roughly 7 A, not the full 10.5 A. ## Package and mounting — D2PAK realities The STB12NK80ZT4 comes in a TO-263-3 (D2PAK) surface-mount package with the tab as the drain connection. The exposed metal tab needs a good thermal and electrical connection to the PCB copper pour — a minimum of 600 mm² of 2 oz copper on the top layer is typical for dissipating 30-40 W. The part is also available in Cut Tape (CT) and Tape & Reel (TR) options, which affects how it is fed into a pick-and-place line. For a rework tech: the D2PAK tab is large enough that a standard hot-air station with a 10 mm nozzle can remove it, but the board needs preheating to 100-120 °C to avoid lifting the pad.","metaTitle":"STB12NK80ZT4 MOSFET N-Ch 800V 10.5A D2PAK SuperMESH","metaDescription":"STB12NK80ZT4 N-channel 800V 10.5A MOSFET in D2PAK, SuperMESH series. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"SuperMESH™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"SuperMESH™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D2PAK (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 100µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"750mOhm @ 5.25A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"D2PAK","Gate Charge (Qg) (Max) @ Vgs":"87 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"2620 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.93","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$4.93000","currency":"USD"},{"qty":10,"price":"$4.14100","currency":"USD"},{"qty":100,"price":"$3.35040","currency":"USD"},{"qty":500,"price":"$2.97812","currency":"USD"},{"qty":1000,"price":"$2.55002","currency":"USD"},{"qty":2000,"price":"$2.40112","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/5db3d8d988d4eae8ae7f0b54c9ea04b8.pdf","sourceUrl":null},"ai":{"faq":[{"question":"How can I order STB12NK80ZT4 or check its availability?","answer":"STB12NK80ZT4 is an active-production part. Submit an RFQ through this listing; we source it to order and confirm current pricing and availability at quote time. No stock-holding claim — availability is confirmed per request."},{"question":"What is the maximum drain current of STB12NK80ZT4 at 100°C?","answer":"The datasheet specifies 10.5 A continuous at 25°C case temperature. At 100°C case temperature, the current must be derated — typically to around 7 A, depending on the thermal design. The exact derating curve is in the datasheet."},{"question":"What is the recommended gate drive voltage for STB12NK80ZT4?","answer":"The recommended gate drive voltage to achieve the rated 750 mOhm Rds(on) is 10 V. The gate threshold is 4.5 V max at 100 µA, so a 5 V logic signal will not fully enhance the FET. Stay within the ±30 V Vgs absolute maximum rating."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STB12NK80ZT4","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STB12NK80ZT4 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}