{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"STB10N60M2","brand":"STMicroelectronics","brandSlug":"stmicroelectronics","productSlug":"STB10N60M2","canonicalUrl":"https://icboms.com/stmicroelectronics/STB10N60M2","factsUrl":"https://icboms.com/api/mcp/products/STB10N60M2","rawCanonicalId":null},"summary":{"shortDescription":"STMicroelectronics MDmesh™ II Plus, N-Channel MOSFET, 600 V Vdss, 7.5 A Id at 25°C, 600 mOhm Rds(on) at 10 V, 13.5 nC Qg, D²PAK (TO-263) surface mount, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V, 7.5 A N-channel in D²PAK STB10N60M2 is an N-channel 600 V, 7.5 A MOSFET in D²PAK (TO-263) surface-mount package. Rds(on) is specified at 600 mOhm maximum at 3 A drain current with 10 V gate drive. The 13.5 nC typical gate charge at 10 V is low for a 600 V part — the MDmesh structure reduces the Miller plateau, so the gate driver sees less capacitive load during hard-switching transitions. Input capacitance is 400 pF at 100 V drain-source, keeping the drive current requirement modest for a controller with limited output drive. ## Junction temperature and power dissipation","metaTitle":"STB10N60M2 MOSFET N-CH 600V 7.5A D2PAK, 600 mOhm Rds(on)","metaDescription":"STB10N60M2 N-channel 600V 7.5A MOSFET in D²PAK, 600 mOhm Rds(on) at 10V, 13.5 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"MDmesh™ II Plus","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"MDmesh™ II Plus","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±25V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 3A, 10V","Power Dissipation (Max)":"85W (Tc)","Supplier Device Package":"D²PAK (TO-263)","Gate Charge (Qg) (Max) @ Vgs":"13.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"400 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.88","priceTiers":[{"qty":1,"price":"$1.88000","currency":"USD"},{"qty":10,"price":"$1.56000","currency":"USD"},{"qty":100,"price":"$1.24180","currency":"USD"},{"qty":500,"price":"$1.05072","currency":"USD"},{"qty":1000,"price":"$0.89153","currency":"USD"},{"qty":2000,"price":"$0.84695","currency":"USD"},{"qty":5000,"price":"$0.81511","currency":"USD"},{"qty":10000,"price":"$0.78813","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/247bee81a6710da55594c986f0cdc0a0.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/STB10N60M2/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of STB10N60M2?","answer":"The maximum Rds(on) is 600 mOhm at 3 A drain current with 10 V gate drive. This is the conduction-loss spec for the part."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/stmicroelectronics/STB10N60M2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/stmicroelectronics/STB10N60M2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}