{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SQJQ184ER-T1_GE3","brand":"Vishay","brandSlug":"vishay","productSlug":"SQJQ184ER-T1_GE3","canonicalUrl":"https://icboms.com/vishay/SQJQ184ER-T1_GE3","factsUrl":"https://icboms.com/api/mcp/products/SQJQ184ER-T1_GE3","rawCanonicalId":null},"summary":{"shortDescription":"Vishay TrenchFET® Automotive N-Channel MOSFET, SQJQ184ER-T1_GE3, 80V Vdss, 430A Id, 1.4mOhm Rds(on), AEC-Q101, PowerPAK 8x8, Surface Mount.","salesMarkdown":"## 80V, 430A N-Channel TrenchFET — conduction loss and switching profile The SQJQ184ER-T1_GE3: The max Rds(on) is 1.4 mOhm at 20 A, 10 V gate drive — this conduction loss figure is the primary spec for a high-current load switch or OR-ing diode replacement, where the voltage drop at full load directly sets the thermal budget. Gate charge totals 240 nC at 10 V, with input capacitance of 16009 pF at 25 V drain bias. The high gate charge means the driver must supply peak current to charge the gate quickly — for a 100 kHz switching frequency the average gate drive current is 24 mA, within the capability of many automotive gate drivers, but the peak current at turn-on may require a gate resistor to manage ringing. The 600 W power dissipation at the case (Tc) sets the upper thermal limit; the actual safe operating area depends on heatsinking and ambient temperature. ## AEC-Q101 qualification and temperature range The 175°C Tj max allows operation in engine bays without derating the current below the 430 A headline, provided the case temperature stays within the thermal impedance limits of the PowerPAK 8x8 package. ## PowerPAK 8x8 — package and board integration The 8-PowerSMD gull-wing package (PowerPAK 8x8) with a large exposed drain pad on the bottom requires a copper land pattern that matches the pad dimensions for thermal conduction — the datasheet's recommended footprint includes a solder-paste stencil aperture that covers 70-80% of the pad area. ## Active lifecycle — sourcing posture As a single-source Vishay TrenchFET, no direct pin-compatible second-source is listed, but the SQJQ160E-T1_GE3 (60 V, 0.85 mOhm) is a functional peer for lower-voltage designs — the 80 V rating of this part provides margin for 48 V or 72 V battery systems.","metaTitle":"Vishay SQJQ184ER-T1_GE3 N-Channel MOSFET, 80V, 430A","metaDescription":"Vishay SQJQ184ER-T1_GE3 Automotive N-Channel MOSFET, 80V Vdss, 430A Id, 1.4mOhm Rds(on), AEC-Q101, PowerPAK 8x8.","metaKeywords":null},"attributes":{"series":"TrenchFET®","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Grade":"Automotive","Series":"TrenchFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"8-PowerSMD, Gull Wing","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"1.4mOhm @ 20A, 10V","Power Dissipation (Max)":"600W (Tc)","Supplier Device Package":"PowerPAK® 8 x 8","Gate Charge (Qg) (Max) @ Vgs":"240 nC @ 10 V","Drain to Source Voltage (Vdss)":"80 V","Input Capacitance (Ciss) (Max) @ Vds":"16009 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"430A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.53","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.53000","currency":"USD"},{"qty":10,"price":"$2.96500","currency":"USD"},{"qty":100,"price":"$2.39890","currency":"USD"},{"qty":500,"price":"$2.13232","currency":"USD"},{"qty":1000,"price":"$1.82579","currency":"USD"},{"qty":2000,"price":"$1.71918","currency":"USD"},{"qty":6000,"price":"$1.64938","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/cd6733d98f0ca4c5b73de780882ce14d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest functional alternative to SQJQ184ER-T1_GE3?","answer":"The SQJQ160E-T1_GE3 is a close peer from the same TrenchFET family — it shares the same PowerPAK 8x8 package, AEC-Q101 qualification, and 20 A test condition for Rds(on), but is rated at 60 V Vdss with a lower 0.85 mOhm max Rds(on). The 80 V rating of the SQJQ184ER-T1_GE3 provides higher voltage margin for 48 V or 72 V systems where the 60 V part would be at risk during load-dump transients."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/vishay/SQJQ184ER-T1_GE3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/vishay/SQJQ184ER-T1_GE3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T19:45:10.375Z","lastPublished":"2026-07-22T19:45:10.375Z","indexable":true}}