{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SQJ431AEP-T1_BE3","brand":"Vishay","brandSlug":"vishay","productSlug":"SQJ431AEP-T1_BE3","canonicalUrl":"https://icboms.com/vishay/SQJ431AEP-T1_BE3","factsUrl":"https://icboms.com/api/mcp/products/SQJ431AEP-T1_BE3","rawCanonicalId":null},"summary":{"shortDescription":"Vishay TrenchFET® P-Channel MOSFET, SQJ431AEP-T1_BE3, 200 V Vdss, 9.4 A continuous drain, 305 mOhm Rds(on) at 10 V, AEC-Q101 qualified, PowerPAK SO-8, -55 to 175 °C junction.","salesMarkdown":"## 200 V P-channel in a PowerPAK SO-8 — high-side switching for 48 V automotive buses The P-channel polarity simplifies high-side drive circuits — no charge pump or bootstrap needed — which matters in 48 V mild-hybrid bus architectures or 72 V truck systems where the gate drive is referenced to the source. At that operating point the conduction loss is about 4.4 W — well within the 68 W package power dissipation rating, but the thermal path through the PowerPAK SO-8 exposed pad needs a solid via stitch to the ground plane to keep the junction below 175 °C. The drive voltage range spans 6 V to 10 V for optimum Rds(on); at 6 V the on-resistance will be higher, so budget the gate drive rail accordingly if the system runs on a 5 V or 3.3 V logic supply. That gate charge is moderate for a 200 V device — the driver sees about 8.5 µC per switching event at 100 kHz, which a standard automotive gate driver IC can handle without excessive dissipation.","metaTitle":"SQJ431AEP-T1_BE3 P-Channel MOSFET, 200 V, 9.4 A, AEC-Q101","metaDescription":"Vishay SQJ431AEP-T1_BE3 P-channel TrenchFET MOSFET, 200 V Vdss, 9.4 A, 305 mOhm Rds(on) at 10 V, AEC-Q101 qualified, PowerPAK SO-8, -55 to 175 °C.","metaKeywords":null},"attributes":{"series":"TrenchFET®","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Grade":"Automotive","Series":"TrenchFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"PowerPAK® SO-8","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"305mOhm @ 3.8A, 10V","Power Dissipation (Max)":"68W (Tc)","Supplier Device Package":"PowerPAK® SO-8","Gate Charge (Qg) (Max) @ Vgs":"85 nC @ 10 V","Drain to Source Voltage (Vdss)":"200 V","Input Capacitance (Ciss) (Max) @ Vds":"3700 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"9.4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.57","priceTiers":[{"qty":1,"price":"$1.57000","currency":"USD"},{"qty":10,"price":"$1.30800","currency":"USD"},{"qty":100,"price":"$1.04110","currency":"USD"},{"qty":500,"price":"$0.88092","currency":"USD"},{"qty":1000,"price":"$0.74744","currency":"USD"},{"qty":3000,"price":"$0.71007","currency":"USD"},{"qty":6000,"price":"$0.68337","currency":"USD"},{"qty":9000,"price":"$0.66075","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/3e38fc0ffc6b9d1f3a65791cb6fbbd56.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SQJ431AEP-T1_BE3/alternatives.json"},"ai":{"faq":[{"question":"Is SQJ431AEP-T1_BE3 AEC-Q101 qualified?","answer":"Yes, the SQJ431AEP-T1_BE3 carries AEC-Q101 qualification, making it suitable for automotive-grade applications where the stress tests for humidity, temperature cycling, and high-temperature reverse bias are required."},{"question":"What is the Rds(on) of SQJ431AEP-T1_BE3 at 10 V?","answer":"The maximum on-resistance is 305 mOhm at a 10 V gate drive with 3.8 A drain current. This is the figure to use for worst-case conduction loss calculations in the power budget."},{"question":"What is the difference between SQJ431AEP and SQJ431AEP-T1_BE3?","answer":"The SQJ431AEP-T1_BE3 suffix indicates the Tape & Reel packaging variant for automated assembly. The die and electrical specifications are identical to the SQJ431AEP base part."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/vishay/SQJ431AEP-T1_BE3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/vishay/SQJ431AEP-T1_BE3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}