{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SQD10N30-330H_4GE3","brand":"Vishay","brandSlug":"vishay","productSlug":"SQD10N30-330H_4GE3","canonicalUrl":"https://icboms.com/vishay/SQD10N30-330H_4GE3","factsUrl":"https://icboms.com/api/mcp/products/SQD10N30-330H_4GE3","rawCanonicalId":null},"summary":{"shortDescription":"Vishay Automotive, AEC-Q101, TrenchFET® N-Channel MOSFET, 300 V Vdss, 10 A Id, 330 mOhm Rds(on), TO-252-3 (DPak), SQD10N30-330H_4GE3.","salesMarkdown":"## 300 V N-Channel TrenchFET — on-resistance at operating temperature The SQD10N30-330H_4GE3: Total gate charge Qg is 47 nC at Vgs = 10 V, with input capacitance Ciss of 2190 pF at Vds = 25 V — these set the switching energy and gate-driver current needed for the target frequency. ## AEC-Q101 qualification and temperature range Maximum power dissipation is 107 W at case temperature Tc, derated as junction temperature rises — the SOA at 175 °C limits continuous current well below the 25 °C figure.","metaTitle":"Vishay SQD10N30-330H_4GE3 N-Channel MOSFET, 300 V, 10 A","metaDescription":"Active Vishay SQD10N30-330H_4GE3 N-channel 300 V MOSFET, 10 A continuous drain, 330 mOhm Rds(on) at 10 V. AEC-Q101 qualified. Quoted to order.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q101, TrenchFET®","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Series":"Automotive, AEC-Q101, TrenchFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±30V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"330mOhm @ 14A, 10V","Power Dissipation (Max)":"107W (Tc)","Supplier Device Package":"TO-252AA","Gate Charge (Qg) (Max) @ Vgs":"47 nC @ 10 V","Drain to Source Voltage (Vdss)":"300 V","Input Capacitance (Ciss) (Max) @ Vds":"2190 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.68","priceTiers":[{"qty":1,"price":"$1.68000","currency":"USD"},{"qty":10,"price":"$1.50000","currency":"USD"},{"qty":100,"price":"$1.16950","currency":"USD"},{"qty":500,"price":"$0.96608","currency":"USD"},{"qty":1000,"price":"$0.76270","currency":"USD"},{"qty":2500,"price":"$0.71185","currency":"USD"},{"qty":5000,"price":"$0.67626","currency":"USD"},{"qty":12500,"price":"$0.66528","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/9d32de170bccf138c8a0309f97bc2fb2.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SQD10N30-330H_4GE3/alternatives.json"},"ai":{"faq":[{"question":"What is the closest functional second-source for SQD10N30-330H_4GE3?","answer":"The SQJ402EP-T1_GE3 is a 100 V N-channel TrenchFET in a similar TO-252 package, but its 100 V Vdss is well below the 300 V rating of the SQD10N30-330H_4GE3 — they are not drop-in replacements for the same voltage rail."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/vishay/SQD10N30-330H_4GE3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/vishay/SQD10N30-330H_4GE3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}