{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SQ4080EY-T1_BE3","brand":"Vishay","brandSlug":"vishay","productSlug":"SQ4080EY-T1_BE3","canonicalUrl":"https://icboms.com/vishay/SQ4080EY-T1_BE3","factsUrl":"https://icboms.com/api/mcp/products/SQ4080EY-T1_BE3","rawCanonicalId":null},"summary":{"shortDescription":"Vishay SQ4080EY-T1_BE3 N-Channel MOSFET, 150 V Vdss, 18 A continuous drain, 85 mOhm Rds(on) at 10 V, 33 nC gate charge, 8-SOIC package.","salesMarkdown":"The SQ4080EY-T1_BE3: That 150 V Vdss puts it solidly in the 48 V telecom bus, 72 V battery string, and 100 V intermediate-bus territory — plenty of headroom above a 48 V rail that can ring past 70 V during a hot-swap event. Maximum on-resistance is 85 mOhm at 10 A gate drive of 10 V, which is the stated drive voltage for achieving the rated Rds(on). At 18 A the conduction loss is I²R = 27.5 W — well above the 7.1 W package limit at Tc, so in practice the continuous current is thermally limited to about 9 A in free air on a standard 1 oz copper pad. The 85 mOhm figure is the one to use for loss budgeting at the nominal operating point, not the 18 A headline. ## Gate drive and switching — the numbers behind the 33 nC Qg Gate charge is 33 nC at Vgs = 10 V, and input capacitance (Ciss) is 1590 pF at Vds = 75 V. The gate-driver must source at least 33 nC per switching cycle; for a 100 kHz switching frequency that translates to 3.3 mA average gate current, well within a standard driver's capability. The 1590 pF Ciss means the gate rise time at a 10-ohm drive impedance is about 16 ns — fast enough for most hard-switching topologies, but the Miller plateau charge (Qgd, not listed here) is the real limiter for switching loss, so budget margin in the dead-time setting. ## Active production — sourcing posture for this Vishay part Lifecycle status is Active per the manufacturer (Vishay).","metaTitle":"Vishay SQ4080EY-T1_BE3 N-Channel MOSFET, 150V, 18A, 8-SOIC","metaDescription":"Vishay SQ4080EY-T1_BE3 N-Channel MOSFET, 150V Vdss, 18A continuous drain, 85mOhm Rds(on) at 10V, -55/+175°C. Active production, sourced per RFQ.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"8-SOIC (0.154\\\", 3.90mm Width)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"85mOhm @ 10A, 10V","Power Dissipation (Max)":"7.1W (Tc)","Supplier Device Package":"8-SOIC","Gate Charge (Qg) (Max) @ Vgs":"33 nC @ 10 V","Drain to Source Voltage (Vdss)":"150 V","Input Capacitance (Ciss) (Max) @ Vds":"1590 pF @ 75 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"18A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.35","priceTiers":[{"qty":1,"price":"$1.35000","currency":"USD"},{"qty":10,"price":"$1.20800","currency":"USD"},{"qty":100,"price":"$0.94210","currency":"USD"},{"qty":500,"price":"$0.77824","currency":"USD"},{"qty":1000,"price":"$0.61439","currency":"USD"},{"qty":2500,"price":"$0.57344","currency":"USD"},{"qty":5000,"price":"$0.54476","currency":"USD"},{"qty":12500,"price":"$0.53592","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7994c5f9f0d350e2a4f5990da1c65a68.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SQ4080EY-T1_BE3/alternatives.json"},"ai":{"faq":[{"question":"How does SQ4080EY-T1_BE3 compare to SUD25N15-52-BE3?","answer":"The SUD25N15-52-BE3 is a higher-current sibling in the same TrenchFET family: 25 A continuous drain vs 18 A, with a lower Rds(on) of 52 mOhm at 5 A, 10 V. Both are N-channel, 150 V Vdss, 8-SOIC packages, and share the same ±20 Vgs max and 4 V threshold. The SUD25N15-52-BE3 has a slightly higher gate charge (40 nC vs 33 nC) and lower power dissipation (3.0 W vs 7.1 W). The SQ4080EY-T1_BE3 is the better fit when the BOM calls for 18 A max and the lower gate charge reduces driver loss."},{"question":"Where can I buy SQ4080EY-T1_BE3 and what is the lead time?","answer":"Submit an RFQ for the quantity needed."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/vishay/SQ4080EY-T1_BE3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/vishay/SQ4080EY-T1_BE3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}