{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPW11N60S5","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPW11N60S5","canonicalUrl":"https://icboms.com/infineon/SPW11N60S5","factsUrl":"https://icboms.com/api/mcp/products/SPW11N60S5","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ series, SPW11N60S5, N-Channel MOSFET, 600V Vdss, 11A Id, 380mOhm Rds(on), TO-247-3 through-hole, -55°C to 150°C junction temperature.","salesMarkdown":"## 600 V CoolMOS™ N-channel MOSFET in TO-247 It is housed in a TO-247-3 through-hole package (PG-TO247-3-21), rated for continuous drain current of 11 A at 25°C case temperature, with a maximum Rds(on) of 380 mOhm at 10 V gate drive. It remains a current-production part with no last-time-buy or obsolescence notice.","metaTitle":"Infineon SPW11N60S5 CoolMOS N-Channel MOSFET","metaDescription":"Infineon SPW11N60S5 CoolMOS N-channel power MOSFET, 600V Vdss, 11A Id, 380mOhm Rds(on). Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.5V @ 500µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 7A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"PG-TO247-3-21","Gate Charge (Qg) (Max) @ Vgs":"54 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1460 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.74","priceTiers":[{"qty":173,"price":"$1.74000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c376e9b943f3f14e21ca0df5d9de777b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SPW11N60S5/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of SPW11N60S5?","answer":"Maximum on-resistance is 380 mOhm at 7 A drain current with 10 V gate-to-source drive."},{"question":"SPW11N60S5 vs IRFP460: which is better for my design?","answer":"The IRFP460 is a 500 V, 20 A planar MOSFET with higher Rds(on) and gate charge than the 600 V CoolMOS SPW11N60S5. For a 600 V bus, the SPW11N60S5 offers the voltage headroom and lower switching losses from CoolMOS technology. The IRFP460 may suit lower-voltage, higher-current designs where its lower cost and proven availability matter more than efficiency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPW11N60S5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPW11N60S5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}