{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPW11N60C3","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPW11N60C3","canonicalUrl":"https://icboms.com/infineon/SPW11N60C3","factsUrl":"https://icboms.com/api/mcp/products/SPW11N60C3","rawCanonicalId":null},"summary":{"shortDescription":"Infineon SPW11N60C3 CoolMOS™ N-Channel MOSFET, 600V Vdss, 11A Id, 380mOhm Rds(on) @ 7A/10V, 60nC Qg, TO-247-3 package, -55 to 150°C junction temperature.","salesMarkdown":"## 600 V CoolMOS™ for PFC and SMPS stages It delivers 11 A continuous drain current at 25°C case temperature and features a typical on-resistance of 380 mOhm at 7 A with a 10 V gate drive. ## Package and mounting — TO-247-3 The TO-247-3 package (PG-TO247-3-21) is a standard through-hole footprint for high-power through-hole devices. The large tab provides a low-thermal-resistance path to the heatsink.","metaTitle":"Infineon SPW11N60C3 CoolMOS N-Ch MOSFET, 600V 11A TO-247-3","metaDescription":"Infineon SPW11N60C3 CoolMOS N-channel MOSFET, 600V Vdss, 11A Id, 380mOhm Rds(on), TO-247-3. Active, RoHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-247-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 500µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 7A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"PG-TO247-3-21","Gate Charge (Qg) (Max) @ Vgs":"60 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1200 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.66","priceTiers":[{"qty":181,"price":"$1.66000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c376e9b943f3f14e21ca0df5d9de777b.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SPW11N60C3/alternatives.json"},"ai":{"faq":[{"question":"What are the exact specifications of SPW11N60C3?","answer":"The SPW11N60C3 is a 600 V N-channel CoolMOS MOSFET rated for 11 A continuous drain current at 25°C case temperature, with a maximum on-resistance of 380 mOhm at 7 A and 10 V gate drive. Gate charge is 60 nC at 10 V, input capacitance is 1200 pF at 25 V drain bias, and the junction temperature range is -55°C to 150°C. It comes in a TO-247-3 package."},{"question":"Is SPW11N60C3 RoHS compliant?","answer":"Yes, the SPW11N60C3 is ROHS3 compliant."},{"question":"What is the Rds(on) of SPW11N60C3?","answer":"The maximum on-resistance is 380 mOhm at 7 A drain current with a 10 V gate drive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPW11N60C3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPW11N60C3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:51:14.863Z","lastPublished":"2026-07-22T18:51:14.863Z","indexable":true}}