{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPP80N06S-08","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPP80N06S-08","canonicalUrl":"https://icboms.com/infineon/SPP80N06S-08","factsUrl":"https://icboms.com/api/mcp/products/SPP80N06S-08","rawCanonicalId":null},"summary":{"shortDescription":"Infineon Automotive SIPMOS® N-Channel Power MOSFET, SPP80N06S-08, 55 V Vdss, 80 A Id, 8 mOhm Rds(on) max @ 80 A / 10 V, 187 nC Qg, TO-220-3 (PG-TO220-3-1), -55 to 175 °C, AEC-Q101 qualified.","salesMarkdown":"## AEC-Q101 and the 175 °C junction ceiling The 175 °C Tj(max) is the absolute limit — above that, the die metallisation and wire bonds begin to degrade. For a 24 V or 48 V automotive rail (e.g., electric power steering, DC-DC converter, or motor pre-drive), the 55 V Vdss gives roughly 15 % headroom over a 48 V nominal bus after accounting for load-dump transients. ## Gate charge and switching budget The total gate charge is 187 nC at a 10 V gate drive. For a 100 kHz switching frequency, the average gate-drive current required is 187 nC × 100 kHz = 18.7 mA — well within the capability of a standard gate-driver IC. The input capacitance (Ciss) is 3660 pF at 25 V Vds, which sets the Miller plateau duration and the switching transition time. A gate resistor in the 10–22 Ω range typically controls the turn-on slew rate without excessive ringing on the TO-220-3 package's leadframe. It is ROHS3 compliant. No official pin-compatible second source or successor is listed in the Infineon SIPMOS® family, so dual-sourcing would require a parametric match from another vendor's 55 V, 80 A, 8 mOhm TO-220 N-channel portfolio.","metaTitle":"Infineon SPP80N06S-08 N-Channel MOSFET, 55 V, 80 A, 8 mOhm","metaDescription":"Infineon SPP80N06S-08 N-channel power MOSFET, 55 Vdss, 80 A continuous drain, 8 mOhm Rds(on) max at 10 V. AEC-Q101 qualified, TO-220-3.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q101, SIPMOS®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"Automotive, AEC-Q101, SIPMOS®","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 240µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"8mOhm @ 80A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"PG-TO220-3-1","Gate Charge (Qg) (Max) @ Vgs":"187 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"3660 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.16","stockQuantity":0,"priceTiers":[{"qty":259,"price":"$1.16000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c9796c462eaabea6bdc0528a6b140063.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of SPP80N06S-08?","answer":"The maximum on-resistance is 8 mOhm at a drain current of 80 A and a gate-source voltage of 10 V. This is the conduction-loss spec for thermal design — actual Rds(on) rises with junction temperature per the normalised curve in the datasheet."},{"question":"Is SPP80N06S-08 RoHS compliant?","answer":"Yes, the SPP80N06S-08 is ROHS3 compliant, meaning it meets the latest EU RoHS directive with no exempted substances above the threshold limits."},{"question":"What is the gate charge of SPP80N06S-08?","answer":"The total gate charge (Qg) is 187 nC at a 10 V gate drive. This figure determines the average current required from the gate driver at a given switching frequency — for example, 18.7 mA at 100 kHz."},{"question":"What is a replacement for SPP80N06S-08?","answer":"No official pin-compatible replacement or successor is listed in the Infineon SIPMOS® family. For a parametric match, look for a 55 V, 80 A, 8 mOhm N-channel MOSFET in a TO-220 package from another vendor — confirm the gate threshold voltage and gate charge align with your drive circuit before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPP80N06S-08","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPP80N06S-08 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}