{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPP15N65C3XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPP15N65C3XKSA1","canonicalUrl":"https://icboms.com/infineon/SPP15N65C3XKSA1","factsUrl":"https://icboms.com/api/mcp/products/SPP15N65C3XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ SPP15N65C3XKSA1 N-channel power MOSFET, 650 V drain-source voltage, 15 A continuous drain current, 280 mOhm Rds(on) at 10 V gate drive, 63 nC gate charge, TO-220-3 through-hole package, -55°C to 150°C junction temperature.","salesMarkdown":"## 650 V CoolMOS for PFC and SMPS stages It is specified for the 10 V gate-drive level typical of standard PWM controllers and gate-driver ICs. ## Conduction and switching losses Maximum on-resistance is 280 mOhm at 9.4 A drain current and 10 V gate drive. At 15 A the Rds(on) will be higher — budget 320–350 mOhm at full current and 100°C junction — which sets the conduction loss at roughly 7–8 W for a 5 A RMS load in a PFC stage. Total gate charge is 63 nC at 10 V. For a 100 kHz switching frequency the gate-drive power is about 63 mW, easily supplied by a standard driver IC, but the 1600 pF input capacitance at 25 V drain-source means the driver must source and sink several amperes during the Miller plateau to keep switching edges clean. ## Thermal and package reality for the BOM Maximum power dissipation is 156 W at case temperature, but the practical limit in a TO-220-3 with a typical clip-on heatsink in still air is around 2–3 W continuous — real designs need a forced-air flow or a larger bolted heatsink to use the full current rating.","metaTitle":"Infineon SPP15N65C3XKSA1 CoolMOS N-Ch MOSFET","metaDescription":"Infineon CoolMOS SPP15N65C3XKSA1 N-channel MOSFET: 650V Vdss, 15A continuous drain, 280mOhm Rds(on), 63nC Qg, TO-220-3.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 675µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"280mOhm @ 9.4A, 10V","Power Dissipation (Max)":"156W (Tc)","Supplier Device Package":"PG-TO220-3-1","Gate Charge (Qg) (Max) @ Vgs":"63 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1600 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"15A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.66","stockQuantity":0,"priceTiers":[{"qty":181,"price":"$1.66000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8643747aff859629b9399e4901eb0acc.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPP15N65C3XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPP15N65C3XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}