{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPP11N80C3XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPP11N80C3XKSA1","canonicalUrl":"https://icboms.com/infineon/SPP11N80C3XKSA1","factsUrl":"https://icboms.com/api/mcp/products/SPP11N80C3XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ SPP11N80C3XKSA1, N-Channel MOSFET, 800 V Vdss, 11 A Id, 450 mOhm Rds(on) @ 7.1 A, 10 V, TO-220-3 package, -55°C to 150°C junction temperature.","salesMarkdown":"The TO-220-3 through-hole package (PG-TO220-3-1) suits single-sided heatsinking in offline power supplies, PFC stages, and flyback converters where the 800 V rating provides margin for universal mains input with reflected voltage transients. ## Gate charge and switching — sizing the driver Total gate charge is 85 nC at 10 V gate drive. For a 100 kHz switching frequency the average gate-drive current needed is 8.5 mA — well within the capability of a standard MOSFET driver IC, but the peak current during the Miller plateau determines the turn-on and turn-off times. The input capacitance is 1600 pF at 100 V drain-source, which together with the gate charge gives a figure of merit (Qg × Rds(on)) of about 38 nC·Ohm — typical for this generation of CoolMOS. The maximum gate-source voltage is ±20 V, so a 10 V drive rail is the recommended operating point for minimum Rds(on). The gate threshold voltage is 3.9 V maximum at 680 µA drain current, which means the device is fully enhanced with a standard 10 V gate signal but will not turn on with a 3.3 V logic-level drive. ## Thermal budget and mounting Maximum power dissipation is 156 W at case temperature, but the junction-to-case thermal resistance must be managed with a proper heatsink. Derate the 11 A current rating above 25°C case temperature per the datasheet curve; at 100°C case the continuous current typically drops to about 7 A. The through-hole TO-220-3 package (PG-TO220-3-1) allows a single screw-mount to a heatsink with thermal compound. The tab is the drain terminal, so the heatsink must be electrically isolated or connected to the drain node. No official successor or second-source cross-reference is listed; the IPD50R950CEAUMA1 is a different CoolMOS variant (500 V, 950 mOhm, surface-mount DPAK) and is not a pin-compatible substitute for this TO-220 device.","metaTitle":"Infineon SPP11N80C3XKSA1 CoolMOS N-Ch MOSFET","metaDescription":"Infineon SPP11N80C3XKSA1 CoolMOS N-channel MOSFET, 800V Vdss, 11A Id, 450mOhm Rds(on). Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 680µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"450mOhm @ 7.1A, 10V","Power Dissipation (Max)":"156W (Tc)","Supplier Device Package":"PG-TO220-3-1","Gate Charge (Qg) (Max) @ Vgs":"85 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"1600 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.85","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.85000","currency":"USD"},{"qty":10,"price":"$2.39100","currency":"USD"},{"qty":100,"price":"$1.93400","currency":"USD"},{"qty":500,"price":"$1.71910","currency":"USD"},{"qty":1000,"price":"$1.47198","currency":"USD"},{"qty":2000,"price":"$1.38603","currency":"USD"},{"qty":5000,"price":"$1.32975","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/0fe744819da4846f1cc8052d054f0894.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the SPP11N80C3XKSA1?","answer":"The maximum on-resistance is 450 mOhm at 7.1 A drain current with 10 V gate drive. This is the value to use for worst-case conduction loss calculations."},{"question":"Is the SPP11N80C3XKSA1 RoHS compliant?","answer":"Yes, the SPP11N80C3XKSA1 is ROHS3 compliant."},{"question":"What is the closest functional equivalent to the SPP11N80C3XKSA1?","answer":"The IPD50R950CEAUMA1 is a CoolMOS CE device but it is a 500 V, 950 mOhm, surface-mount DPAK part — it is not a pin-compatible or direct replacement for the 800 V, 450 mOhm, TO-220 SPP11N80C3XKSA1. No official second-source alternate is listed for this specific part."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPP11N80C3XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPP11N80C3XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}