{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPP08N50C3XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPP08N50C3XKSA1","canonicalUrl":"https://icboms.com/infineon/SPP08N50C3XKSA1","factsUrl":"https://icboms.com/api/mcp/products/SPP08N50C3XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ SPP08N50C3XKSA1, N-Channel MOSFET, 560 V Vds, 7.6 A Id, 600 mOhm Rds(on) @ 10 V, 32 nC Qg, TO-220-3, -55 to 150 °C.","salesMarkdown":"## 560 V CoolMOS for offline power stages The Infineon SPP08N50C3XKSA1 is an N-channel CoolMOS power MOSFET in a through-hole TO-220-3 package (PG-TO220-3-1). The 32 nC typical gate charge at 10 V keeps switching losses manageable in hard-switched topologies like flyback converters, PFC boost stages, and auxiliary power supplies where the 560 V breakdown provides margin for universal AC input designs. The 600 mOhm max on-resistance at 10 V drive and 4.6 A sets the conduction loss baseline. At 7.6 A full load, expect roughly 600 mOhm × (7.6 A)² ≈ 35 W conduction loss — which consumes nearly half the 83 W dissipation limit at Tc=25°C. For hard-switching above 100 kHz, the 750 pF input capacitance at 25 V drain-source means the driver must supply about 75 nC per cycle at 10 V; budget gate drive losses accordingly. ## Active lifecycle — no near-term LTB concern There is no announced last-time-buy or end-of-life notice for this CoolMOS C3 series variant. For production BOMs that require a second-source hedge, the TO-220-3 footprint is common across the 500–600 V CoolMOS family, though no official cross-reference is listed in this record.","metaTitle":"Infineon SPP08N50C3XKSA1 CoolMOS N-Ch MOSFET, 560 V, 7.6 A","metaDescription":"Infineon SPP08N50C3XKSA1 CoolMOS N-channel MOSFET: 560 V Vds, 7.6 A Id, 600 mOhm Rds(on), TO-220-3. Active lifecycle.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 350µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 4.6A, 10V","Power Dissipation (Max)":"83W (Tc)","Supplier Device Package":"PG-TO220-3-1","Gate Charge (Qg) (Max) @ Vgs":"32 nC @ 10 V","Drain to Source Voltage (Vdss)":"560 V","Input Capacitance (Ciss) (Max) @ Vds":"750 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7.6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.85","stockQuantity":0,"priceTiers":[{"qty":352,"price":"$0.85000","currency":"USD"}]},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/Infineon-SPP_I_A08N50C3-DS-v02_91-en%5B1%5D.pdf?fileId=db3a304412b407950112b42d13a947ff","sourceUrl":null},"ai":{"faq":[{"question":"What is the exact Vds for SPP08N50C3XKSA1?","answer":"The drain-to-source voltage rating (Vdss) is 560 V. This is the maximum voltage the MOSFET can block between drain and source with the gate shorted to source."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPP08N50C3XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPP08N50C3XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}