{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPI11N60S5","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPI11N60S5","canonicalUrl":"https://icboms.com/infineon/SPI11N60S5","factsUrl":"https://icboms.com/api/mcp/products/SPI11N60S5","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ SPI11N60S5, N-Channel MOSFET, 600V Vdss, 11A Id, 380mOhm Rds(on) @ 7A, 10V, 54nC Qg, TO-262-3 (PG-TO262-3-1) package, Through Hole, -55°C to 150°C.","salesMarkdown":"## 600V CoolMOS N-channel — switching power supply workhorse The through-hole TO-262 (I²Pak) package with long leads allows the backside tab to be bolted to a heatsink, pulling heat into the chassis rather than the board. The 54 nC total gate charge at 10 V is moderate for a 600 V, 11 A device — a gate driver with 1 A peak source/sink capability can switch it in the 50–100 ns range, keeping crossover losses manageable at 50–100 kHz. Input capacitance Ciss is 1460 pF at 25 V drain-source, which sets the gate-drive impedance required to avoid Miller-plateau ringing. The 125 W power dissipation ceiling in the TO-262 package means the thermal interface to the heatsink is the real limit on continuous output current, not the die itself. For a production BOM, this means no near-term requalification risk. ## Temperature range and thermal design boundary The 125 W power dissipation figure at Tc=25°C is the theoretical maximum with an infinite heatsink; real-world designs derate based on the thermal resistance of the TO-262 tab-to-heatsink interface and the ambient air temperature inside the enclosure.","metaTitle":"Infineon SPI11N60S5 CoolMOS N-Channel MOSFET, 600V, 11A","metaDescription":"SPI11N60S5 CoolMOS N-channel MOSFET from Infineon: 600V Vdss, 11A Id, 380mOhm Rds(on), TO-262 package. Active product, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.5V @ 500µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 7A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"PG-TO262-3-1","Gate Charge (Qg) (Max) @ Vgs":"54 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1460 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.07","stockQuantity":0,"priceTiers":[{"qty":368,"price":"$1.07000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/68ddbfa7c6479ed118419de3b76c1086.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the SPI11N60S5?","answer":"This is the conduction-loss figure used for efficiency calculations in the target SMPS application."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPI11N60S5","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPI11N60S5 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}