{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPI07N65C3XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPI07N65C3XKSA1","canonicalUrl":"https://icboms.com/infineon/SPI07N65C3XKSA1","factsUrl":"https://icboms.com/api/mcp/products/SPI07N65C3XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ series SPI07N65C3XKSA1, N-Channel MOSFET, 650 V Vdss, 7.3 A Id, 600 mOhm Rds(on) @ 10 V, TO-262-3 (PG-TO262-3-1) through-hole package, -55°C to 150°C operating junction temperature.","salesMarkdown":"## 650 V CoolMOS™ — what the ratings mean for the switching stage The TO-262-3 (PG-TO262-3-1) through-hole package suits wave-soldered boards where a heatsink can be bolted to the tab. ## Gate-drive and switching behaviour The 10 V gate-drive level for the rated Rds(on) is standard for CoolMOS™; the ±20 V absolute maximum gate-source voltage gives headroom for ringing on a hard-switched node. For soft-switching topologies (LLC, phase-shifted full bridge) the 27 nC gate charge keeps the circulating energy manageable. ## Thermal budget and mounting The -55°C to 150°C junction temperature range covers cold-start in outdoor telecom cabinets and full-load thermal cycling in enclosed power supplies.","metaTitle":"Infineon SPI07N65C3XKSA1 CoolMOS™ N-Channel MOSFET, 650 V","metaDescription":"Infineon SPI07N65C3XKSA1 CoolMOS™ N-channel power MOSFET, 650 V drain-source, 600 mOhm Rds(on), 7.3 A continuous drain. TO-262-3 package.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 350µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 4.6A, 10V","Power Dissipation (Max)":"83W (Tc)","Supplier Device Package":"PG-TO262-3-1","Gate Charge (Qg) (Max) @ Vgs":"27 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"790 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7.3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.83","priceTiers":[{"qty":363,"price":"$0.83000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/985f7e6a2ca7262d86a912215f7ceef2.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SPI07N65C3XKSA1/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of SPI07N65C3XKSA1?","answer":"The maximum on-resistance is 600 mOhm at a drain current of 4.6 A with a 10 V gate drive."},{"question":"Is SPI07N65C3XKSA1 RoHS compliant?","answer":"Yes, it is ROHS3 compliant per Infineon's classification."},{"question":"Is SPI07N65C3XKSA1 equivalent to FQA7N65?","answer":"Both are 650 V N-channel MOSFETs in similar through-hole packages, but the FQA7N65 has a different gate-threshold voltage and package marking. Verify the gate-drive circuit and pad layout before substituting — the CoolMOS™ C3 technology also gives a different switching characteristic (lower gate charge, faster body diode recovery) that may affect EMI or dead-time timing."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPI07N65C3XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPI07N65C3XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}