{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPB80N06SL2-7","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPB80N06SL2-7","canonicalUrl":"https://icboms.com/infineon/SPB80N06SL2-7","factsUrl":"https://icboms.com/api/mcp/products/SPB80N06SL2-7","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS SPB80N06SL2-7, N-Channel Automotive MOSFET, 55V Vdss, 80A Id, 7mOhm Rds(on) at 10V, 130nC Qg, TO-263-3 (D²Pak) package, -55°C to 175°C.","salesMarkdown":"## 175°C junction — under-hood thermal headroom The wide temperature range also means the Rds(on) will roughly double at 175°C — budget for that in your worst-case conduction loss calculation. Gate charge is 130 nC max at 10 V, and input capacitance is 3160 pF at 25 V drain-source. That Qg figure tells the gate-driver designer the switching energy per cycle — at 100 kHz, the average gate current is about 13 mA, well within a standard driver's capability. ## TO-263-3 — footprint and thermal reality Packaged in a TO-263-3 (D²Pak) surface-mount case with two leads plus the drain tab — the supplier device package is PG-TO263-3-2. The tab is the primary thermal path: a 1-inch-square copper pad on the PCB with vias to an internal plane gets the junction-to-ambient resistance down to a usable level for the 210 W power dissipation rating.","metaTitle":"Infineon SPB80N06SL2-7 N-Channel MOSFET, 55V, 80A, 7mOhm","metaDescription":"Infineon SPB80N06SL2-7 OptiMOS N-channel automotive MOSFET, 55V Vdss, 80A Id, 7mOhm Rds(on) at 10V. Active lifecycle, TO-263-3 package.","metaKeywords":null},"attributes":{"series":"OptiMOS®","packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS®","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 150µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"7mOhm @ 60A, 10V","Power Dissipation (Max)":"210W (Tc)","Supplier Device Package":"PG-TO263-3-2","Gate Charge (Qg) (Max) @ Vgs":"130 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"3160 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.79","stockQuantity":0,"priceTiers":[{"qty":382,"price":"$0.79000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/6dcfe9e5558d06b90d0213fdaef56847.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of SPB80N06SL2-7?","answer":"The maximum Rds(on) is 7 mOhm at 60 A drain current with 10 V gate drive. At 4.5 V gate drive the on-resistance is higher — the datasheet's typical curve shows the increase."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPB80N06SL2-7","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPB80N06SL2-7 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}