{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPB80N03S2L05","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPB80N03S2L05","canonicalUrl":"https://icboms.com/infineon/SPB80N03S2L05","factsUrl":"https://icboms.com/api/mcp/products/SPB80N03S2L05","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ SPB80N03S2L05, N-Channel MOSFET, 30 V Vdss, 80 A Id, 4.9 mOhm Rds(on) at 10 V, 89.7 nC Qg, D²Pak (TO-263-3), -55 to 175 °C.","salesMarkdown":"## 30 V, 80 A N-channel — CoolMOS™ in a D²Pak The Infineon SPB80N03S2L05 is a 30 V, 80 A N-channel MOSFET from the CoolMOS™ series, built on a metal-oxide semiconductor trench process. It is designed for low-voltage power conversion where conduction loss and switching speed both matter — synchronous rectification, DC-DC bricks, load switches, and motor pre-drive stages. The 4.9 mOhm maximum on-resistance at 10 V gate drive keeps I²R losses low at full load, while the 89.7 nC gate charge at 10 V gives a reasonable switching loss profile for hard-switched topologies up to a few hundred kilohertz. If your design runs the gate at 4.5 V (the lower drive voltage listed), expect higher on-resistance; the datasheet curve will show the multiplier. ## Thermal and package — board-level fit The D²Pak (TO-263-3) footprint is a surface-mount power package with a large drain tab that conducts heat into the PCB copper plane. The 167 W power dissipation at the case (Tc) assumes an infinite heatsink — real-world dissipation depends on the board's copper area, layer stack, and airflow. That means no last-time-buy pressure for BOM planners. For dual-sourcing or a pin-compatible second source, Infineon's own CoolMOS™ portfolio includes several 30 V N-channel parts in the same D²Pak footprint; cross-reference against your specific gate-drive voltage and switching frequency to confirm fit.","metaTitle":"Infineon SPB80N03S2L05 CoolMOS™ N-Channel MOSFET, 30V 80A","metaDescription":"Infineon SPB80N03S2L05 CoolMOS™ N-channel MOSFET, 30V Vdss, 80A Id, 4.9mOhm Rds(on) at 10V. Active lifecycle.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 110µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"4.9mOhm @ 55A, 10V","Power Dissipation (Max)":"167W (Tc)","Supplier Device Package":"PG-TO263-2","Gate Charge (Qg) (Max) @ Vgs":"89.7 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"3320 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.35","priceTiers":[{"qty":866,"price":"$0.35000","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SPB80N03S2L05/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of SPB80N03S2L05 at 10V?","answer":"The maximum on-resistance is 4.9 mOhm at 55 A drain current with 10 V gate-to-source. That is the rated hot condition; the typical value at 25 °C junction temperature will be lower, but the 4.9 mOhm max is the number to use for worst-case conduction loss calculations."},{"question":"What is the gate charge (Qg) of SPB80N03S2L05?","answer":"The total gate charge is 89.7 nC at 10 V gate drive. This figure includes the gate-to-source and gate-to-drain (Miller) charge and determines the energy the gate driver must deliver per switching cycle."},{"question":"Does SPB80N03S2L05 have an equivalent or cross reference?","answer":"Infineon's CoolMOS™ family includes several 30 V N-channel MOSFETs in the same D²Pak footprint. A direct pin-compatible equivalent would need matching Rds(on), gate charge, and gate-drive voltage thresholds — cross-reference against your specific operating point rather than assuming a drop-in."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPB80N03S2L05","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPB80N03S2L05 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-22T18:51:14.863Z","lastPublished":"2026-07-22T18:51:14.863Z","indexable":true}}