{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPB11N60C2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPB11N60C2","canonicalUrl":"https://icboms.com/infineon/SPB11N60C2","factsUrl":"https://icboms.com/api/mcp/products/SPB11N60C2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ SPB11N60C2, N-Channel Power MOSFET, 600 V Vdss, 11 A Id, 380 mOhm Rds(on) at 10 V, 41.5 nC Qg, TO-263-3 D²Pak, -55°C to 150°C.","salesMarkdown":"## 600 V CoolMOS — the offline power stage workhorse The SPB11N60C2: It is built on Infineon's CoolMOS technology, which optimises the on-resistance versus gate-charge trade-off for hard-switching topologies like PFC boost stages, flyback converters, and two-switch forward converters. ## Gate charge and switching — 41.5 nC at 10 V Total gate charge of 41.5 nC at 10 V defines the drive current needed per switching frequency. Input capacitance is 1460 pF at 25 V drain-source, which together with the gate charge defines the turn-on and turn-off delay. The 5.5 V maximum gate threshold at 500 µA drain current ensures the device is fully enhanced at 10 V drive, with headroom before the ±20 V absolute maximum. ## Package and thermal — D²Pak with exposed tab The SPB11N60C2 comes in the TO-263-3 (D²Pak) surface-mount package, supplier code PG-TO263-3-2. Maximum power dissipation is 125 W at case temperature. ## Lifecycle and sourcing The RoHS compliance is listed as non-compliant, so verify the BOM's exemption status or confirm the lead-free equivalent if the design requires full RoHS conformance.","metaTitle":"Infineon SPB11N60C2 CoolMOS N-Channel MOSFET, 600 V, 11 A","metaDescription":"Infineon SPB11N60C2 CoolMOS N-channel power MOSFET. 600 V Vdss, 11 A continuous drain, 380 mOhm Rds(on) at 10 V. TO-263-3 D²Pak. Active production.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"RoHS non-compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"5.5V @ 500µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 7A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"PG-TO263-3-2","Gate Charge (Qg) (Max) @ Vgs":"41.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1460 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.92","stockQuantity":0,"priceTiers":[{"qty":156,"price":"$1.92000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f1538ed8ed0f4e5c8c34cf33fa0ee527.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPB11N60C2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPB11N60C2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}