{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPA11N60C3","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPA11N60C3","canonicalUrl":"https://icboms.com/infineon/SPA11N60C3","factsUrl":"https://icboms.com/api/mcp/products/SPA11N60C3","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ SPA11N60C3, N-Channel MOSFET, 600 V Vdss, 11 A Id, 380 mOhm Rds(on) @ 10 V, TO-220-3 Full Pack (PG-TO220-3-111), -55°C to 150°C junction.","salesMarkdown":"The SPA11N60C3: It belongs to the C3 generation of Infineon's superjunction family, designed for hard-switching topologies where low Rds(on) and fast switching are both needed. The full-pack (isolated) TO-220 eliminates the need for an insulating washer and thermal grease in many designs, simplifying assembly and improving thermal contact to the heatsink. The specified drive voltage for achieving the rated Rds(on) is 10 V, with a maximum gate-source voltage of ±20 V. The input capacitance of 1200 pF at 25 V drain-source is typical for this class; it means the gate-drive loop inductance needs to be kept under 10 nH to avoid Miller plateau oscillations. There is no last-time-buy risk, no need to hunt for surplus or broker stock.","metaTitle":"Infineon SPA11N60C3 CoolMOS N-Ch MOSFET","metaDescription":"Infineon SPA11N60C3 CoolMOS N-Channel MOSFET, 600V Vdss, 11A Id, 380mOhm Rds(on) at 10V. TO-220 Full Pack. Active lifecycle.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 500µA","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 7A, 10V","Power Dissipation (Max)":"33W (Tc)","Supplier Device Package":"PG-TO220-3-111","Gate Charge (Qg) (Max) @ Vgs":"60 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"1200 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"11A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$6.4800","priceTiers":null},"links":{"datasheetUrl":"https://cdn.icboms.com/9eaa6cfda9a73c499ea06689805d81d8.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SPA11N60C3/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of SPA11N60C3?","answer":"The Rds(on) is 380 mOhm maximum at 7 A drain current and 10 V gate drive. This is the on-resistance you design your conduction losses around in a switching power supply."},{"question":"What is the maximum Vgs for SPA11N60C3?","answer":"The maximum gate-source voltage is ±20 V. The recommended drive voltage for achieving the rated Rds(on) is 10 V."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPA11N60C3","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPA11N60C3 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}