{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"SPA08N80C3XKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"SPA08N80C3XKSA1","canonicalUrl":"https://icboms.com/infineon/SPA08N80C3XKSA1","factsUrl":"https://icboms.com/api/mcp/products/SPA08N80C3XKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ N-Channel MOSFET, SPA08N80C3XKSA1, 800 V, 8 A, 650 mOhm, TO-220-3 Full Pack, Tube.","salesMarkdown":"## 800 V N-channel in the Full-Pack TO-220 The SPA08N80C3XKSA1 is an N-channel 800 V MOSFET from Infineon's CoolMOS™ series, rated for 8 A continuous drain current at 25°C case temperature. The 800 V drain-source breakdown voltage (Vdss) places it squarely in off-line flyback, PFC boost, and LLC half-bridge topologies where the DC bus sits at 380-400 V and the reflected voltage pushes the drain above 600 V. The 650 mOhm maximum Rds(on) at 5.1 A and 10 V gate drive gives a conduction loss of roughly 3.3 W at the rated current — manageable in the TO-220 Full Pack with the 40 W power dissipation ceiling. ## Gate charge and switching budget Total gate charge (Qg) is 60 nC at Vgs = 10 V. For a typical hard-switched PFC running at 70 kHz, the average gate-drive current needed is Qg × fsw = 60 nC × 70 kHz = 4.2 mA — well within a standard driver. The 1100 pF input capacitance (Ciss) at 100 V drain bias determines the rise and fall times at the gate; paired with a 10 Ω gate resistor, the RC time constant is about 11 ns, clean enough to avoid Miller plateau ringing in a well-laid-out PCB. ## Full-Pack isolation and mounting The PG-TO220-3-31 package (TO-220-3 Full Pack) moulds the backside tab in epoxy — the tab is electrically isolated from the drain. This eliminates the need for a mica washer or silicone pad between the device and the heatsink, cutting assembly time and thermal resistance. The mounting hole accepts a standard M3 screw; torque to 0.6 N·m per the package outline. The -55°C to 150°C junction temperature range covers cold-start and self-heating in an enclosed power supply. ## Lifecycle and supply posture The base product number SPA08N80 anchors the CoolMOS™ C3 family; no pin-compatible successor has been announced for this voltage/current bin. ROHS3 compliance (no exemptions) means it ships unrestricted into EU and UK markets. Sourced through independent and authorized distribution; availability and current pricing confirmed at RFQ against the BOM quantity.","metaTitle":"SPA08N80C3XKSA1 CoolMOS N-Ch 800V 8A TO-220FP","metaDescription":"Active Infineon SPA08N80C3XKSA1 N-channel 800V 8A MOSFET, 650mOhm Rds(on), TO-220-3 Full Pack, CoolMOS series. Sourced to order against RFQ.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Discrete Semiconductors"],"specifications":{"Mfr":"Infineon Technologies","Series":"CoolMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","FET Feature":"-","Mounting Type":"Through Hole","Package / Case":"TO-220-3 Full Pack","Product Status":"Active","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 470µA","Base Product Number":"SPA08N80","Operating Temperature":"-55°C~150°C(TJ)","Rds On (Max) @ Id, Vgs":"650mOhm @ 5.1A, 10V","Power Dissipation (Max)":"40W (Tc)","Supplier Device Package":"PG-TO220-3-31","Gate Charge (Qg) (Max) @ Vgs":"60 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"1100 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.1400","priceTiers":[{"qty":1,"price":"$3.14000","currency":"USD"},{"qty":10,"price":"$2.81900","currency":"USD"},{"qty":100,"price":"$2.31000","currency":"USD"},{"qty":500,"price":"$1.96646","currency":"USD"},{"qty":1000,"price":"$1.65846","currency":"USD"},{"qty":2000,"price":"$1.57554","currency":"USD"},{"qty":5000,"price":"$1.54515","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/80a72fdcf5fcf5ed266d7c90b906f992.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/SPA08N80C3XKSA1/alternatives.json"},"ai":{"faq":[{"question":"What is the closest pin-compatible alternative to SPA08N80C3XKSA1 in this component family?","answer":"Within the same CoolMOS™ C3 generation, parts sharing the SPA08N80 base number and the same TO-220-3 Full Pack footprint are the direct equivalents. No pin-compatible successor has been released for the 800 V / 8 A bin — the C7 or CFD7 families use different die technology and may not match the gate charge profile without driver adjustment."},{"question":"What compliance documentation does this brand provide for SPA08N80C3XKSA1 (RoHS, REACH, UL, IEC)?","answer":"The part is certified ROHS3 Compliant — no exemptions under EU RoHS Directive 2011/65/EU. Infineon provides a material declaration and REACH SVHC statement on request. UL recognition and IEC qualification (IEC 60747-8 for discrete power semiconductors) are standard for the CoolMOS™ series; the specific UL file number is available through the Infineon datasheet."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/SPA08N80C3XKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/SPA08N80C3XKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-08-11T15:49:49.435Z","lastPublished":"2026-08-11T15:49:49.435Z","indexable":true}}